Chanyoung (2013)
Characterization of graphene-silicon Schottky barrier diodes using impedance spectroscopyAppl. Phys. Lett., 103
Güçlü (2024)
Frequency-dependent physical parameters, the voltage-dependent profile of surface traps, and their lifetime of Au/(ZnCdS-GO: PVP)/n-Si structures by using the conductance methodJournal of Materials Science: Materials in Electronics, 35
Tezcan (2024)
A study on the complex dielectric (ε*)/electric-modulus (M*)/impedance (Z*), tangent-loss (tanδ), and ac conductivity (σac) of the Al/(S: DLC)/p-Si/Au (MIS)-type Schottky structures in a wide range of frequency and voltage at room temperature (RT)Physica B: Condensed Matter, 684
Demirezen (2020)
Electric and dielectric parameters in Au/n-Si (MS) capacitors with metal oxide-polymer interlayer as function of frequency and voltageJournal of Materials Science: Materials in Electronics, 31
Reddy (2018)
Surface chemical states, electrical and carrier transport properties of Au/ZrO2/n-GaN MIS junction with a high-k ZrO2 as an insulating layerMater. Sci. and Engin. B, 231
Demirezen (2019)
The study on negative dielectric properties of Al/PVA (Zn-doped)/p-Si (MPS) capacitorsIndian Journal of Physics, 93
Mars (2016)
Effect of heat treatment under sulfur atmosphere on physical properties of pyrite (FeS2) sprayed thin filmsJ. Alloys Compd., 688
Erbilen Tanrıkulu (2023)
Variation of electrical and dielectric characteristics of Schottky diodes (SDs) depending on the existence of PVC and carbon-nanotube (CNT)-doped PVC interlayersJ. Mater. Sci. Mater. Electron, 34
Altındal Yerişkin (2023)
Dielectric properties of MS diodes with Ag: ZnO doped PVP interfacial layer depending on voltage and frequencyMaterials Chemistry and Physics, 303
Güçlü (2024)
Voltage and frequency reliant interface traps and their lifetimes of the MPS structures interlayered with CdTe: PVA via the admittance methodPhysica B: Condensed Matter, 677
Yellaiah (2014)
Low temperature DC conductivity, impedance spectroscopy and dielectric properties of Na doped Cd0.8Zn0.2S semiconductor compoundsJournal of alloys and compounds, 609
Card (1971)
Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodesJournal of Physics D: Applied Physics, 4
Robertson (2002)
Diamond-like Amorphous CarbonMater. Sci. Eng. Report A Review Journal, 37
Altındal (2022)
Mashayekhi Dielectric properties and negative-capacitance/dielectric in Au/n-Si structures with PVC and (PVC: Sm2O3) interlayerMaterials Science in Semiconductor Processing, 147
Demirezen (2022)
A comparison of Au/n-Si Schottky diodes (SDs) with/without a nanographite (NG) interfacial layer by considering interlayer, surface states (Nss) and series resistance (Rs) effectsPhysica Scripta, 97
Akın (2022)
A comparison electricdielectric features of Al/p-Si (MS) and Al/(Al2O3: PVP)/p-Si (MPS) structures using voltage-current (V-I) and frequency-impedance (f-Z) measurementsJ. Mater. Sci. Mater. Electron., 33
Akın (2024)
Investigation of the interface state characteristics of the Al/Al2O3/Ge/p-Si heterostructure over a wide frequency range by capacitance and conductance measurementsMaterials Science in Semiconductor Processing, 170
Sharma (2016)
Frequency and voltage dependence of admittance characteristics of Al/Al2O3/PVA:n-ZnSe Schottky barrier diodesMaterials Science in Semiconductor Processing, 41
Çetinkaya (2024)
The capacitance/conductance and surface state intensity characteristics of the Al/(CMAT)/p-Si structuresPhysica Scripta, 99
Manikanthababu (2015)
Synthesis, characterization, and radiation damage studies of high-k dielectric (HfO2) films for MOS device applicationsRadiat. Eff. Defect Solid, 170
Polat (2023)
Variation in the dielectric and magnetic characteristics of multiferroic LuFeO3 as a result of cobalt substitution at Fe sitesJournal of Alloys and Compounds, 963
Al-Ahmadi (2020)
Metal oxide semiconductor-based Schottky diodes: a review of recent advancesMaterials Research Express, 7
Berktaş (2023)
Negative capacitance behavior at low frequencies of nitrogen-doped polyethylenimine-functionalized graphene quantum dots-based StructureACS Applied Electronic Materials, 5
Erbilen Tanrıkulu (2021)
On the changes in the dielectric, electric modulus, and ac electrical-conductivity in the Al/(C29H32O17)/p-Si (MPS) structures in wide range of frequency and voltagePhysica B: Condensed Matter, 623
Tan (2022)
Dielectric properties, electric modulus and conductivity profiles of Al/Al2O3/p-Si type MOS capacitor in large frequency and bias interval, Engineering Science and TechnologyInternational Journal, 27
Romdhane (2022)
Impedance spectroscopic study of charge transport and relaxation mechanism in the lead-free hybrid perovskite CH3NH3CuCl3Phys. E Low-Dimensional Syst. Nanostructures., 136
Taşçıoğlu (2012)
Effects of interface states and series resistance on electrical properties of Al/nanostructure CdO/p-GaAs diodeJournal of alloys and compounds, 541
Çetinkaya (2021)
Electrical parameters of Au/(%1Ni-PVA)/n-Si (MPS) structure: Surface states and their lifetimesPhys. B Condens. Matter, 621
Çetin (2020)
Electrical Properties of MOS Capacitor with TiO2/SiO2 Dielectric LayerSilicon, 12
Alsmael (2022)
The Impact of Dopant on the Dielectric Properties of Metal-Semiconductor With ZnFe2O4 Doped Organic Polymer Nanocomposites InterlayerIEEE Transactions on Nanotechnology, 21
Choudhary (2018)
Structural, optical, dielectric, and electrical properties of (PEO–PVP)–ZnO nanocompositesJ. Phys. Chem. Solid., 121
Asar (2023)
Frequency-dependent electrical parameters and extracted voltage-dependent surface states in Al/DLC/p-Si structure using the conductance methodApplied Physics A, 129
Basha (2017)
Structural and Dielectric Properties of PVP Based Composite Polymer Electrolyte Thin FilmsJournal of Inorganic and Organometallic Polymers and Materials, 27
Akbaş (2021)
Frequency dependence of the dielectric properties of Au/(NG:PVP)/n-Si structuresJ. Mater. Sci. Mater. Electron., 32
Balcı (2023)
Structural and morphological analysis of rf sputtered nano ZnSe coatings as a function of thickness: investigation of the effect of metal contact on MIS structure with ZnSe interfacial layerJournal of Materials Science: Materials in Electronics, 34
Berktaş (2024)
Tunable dielectric characteristics of the nanocomposite diode based on functionalized graphene quantum dots with and without gadoliniumSurfaces and Interfaces, 51
Bengi (2024)
Investigation of the frequency effect on electrical modulus and dielectric properties of Al/p-Si structure with% 0.5 Bi: ZnO interfacial layerIonics, 30
Barkhordari (2023)
On the investigation of frequency-dependent dielectric features in Schottky barrier diodes (SBDs) with polymer interfacial layer doped by graphene and ZnTiO3 nanostructuresApplied Physics A, 129
Mısırlıoğlu (2022)
Dielectric response and capacitance measurements of Ag/PVAc-Si/p-Si StructureSilicon, 14
Physica B: Condensed Matter – CrossRef
Published: Sep 1, 2024
Access the full text.
Sign up today, get DeepDyve free for 14 days.