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Synthesis, characterization and radiation damage studies of high-k dielectric (HfO2) films for MOS device applications

Synthesis, characterization and radiation damage studies of high-k dielectric (HfO2) films for... The current trend in miniaturization of metal oxide semiconductor devices needs high-k dielectric materials as gate dielectrics. Among all the high-k dielectric materials, HfO2 enticed the most attention, and it has already been introduced as a new gate dielectric by the semiconductor industry. High dielectric constant (HfO2) films (10 nm) were deposited on Si substrates using the e-beam evaporation technique. These samples were characterized by various structural and electrical characterization techniques. Rutherford backscattering spectrometry, X-ray reflectivity, and energy-dispersive X-ray analysis measurements were performed to determine the thickness and stoichiometry of these films. The results obtained from various measurements are found to be consistent with each other. These samples were further characterized by I–V (leakage current) and C–V measurements after depositing suitable metal contacts. A significant decrease in the leakage current and the corresponding increase in device capacitance are observed when these samples were annealed in oxygen atmosphere. Furthermore, we have studied the influence of gamma irradiation on the electrical properties of these films as a function of the irradiation dose. The observed increase in the leakage current accompanied by changes in various other parameters, such as accumulation capacitance, inversion capacitance, flat band voltage, mid-gap voltage, etc., indicates the presence of various types of defects in irradiated samples. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Radiation Effects and Defects in Solids Taylor & Francis

Synthesis, characterization and radiation damage studies of high-k dielectric (HfO2) films for MOS device applications

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References (24)

Publisher
Taylor & Francis
Copyright
© 2014 Taylor & Francis
ISSN
1029-4953
eISSN
1042-0150
DOI
10.1080/10420150.2014.980259
Publisher site
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Abstract

The current trend in miniaturization of metal oxide semiconductor devices needs high-k dielectric materials as gate dielectrics. Among all the high-k dielectric materials, HfO2 enticed the most attention, and it has already been introduced as a new gate dielectric by the semiconductor industry. High dielectric constant (HfO2) films (10 nm) were deposited on Si substrates using the e-beam evaporation technique. These samples were characterized by various structural and electrical characterization techniques. Rutherford backscattering spectrometry, X-ray reflectivity, and energy-dispersive X-ray analysis measurements were performed to determine the thickness and stoichiometry of these films. The results obtained from various measurements are found to be consistent with each other. These samples were further characterized by I–V (leakage current) and C–V measurements after depositing suitable metal contacts. A significant decrease in the leakage current and the corresponding increase in device capacitance are observed when these samples were annealed in oxygen atmosphere. Furthermore, we have studied the influence of gamma irradiation on the electrical properties of these films as a function of the irradiation dose. The observed increase in the leakage current accompanied by changes in various other parameters, such as accumulation capacitance, inversion capacitance, flat band voltage, mid-gap voltage, etc., indicates the presence of various types of defects in irradiated samples.

Journal

Radiation Effects and Defects in Solids – Taylor & Francis

Published: Mar 4, 2015

Keywords: high-k dielectrics; MOS devices; RBS; XRR; I–V; C–V measurements and gamma irradiation

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