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- Publisher
- SPIE
- Copyright
- Copyright © 2010 COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
- ISSN
- 0277-786X
- eISSN
- 1996-756X
- DOI
- 10.1117/12.854122
- Publisher site
- See Article on Publisher Site
Abstract
Using thin films of crystalline silicon to make solar cells reduces the cost by reducing the amount of material needed and allowing poorer quality material with shorter carrier diffusion lengths to be used. However, the indirect band gap of silicon requires that a light trapping approach be used to maximize optical absorption. Here, a photonic crystal (PC) based approach is used to maximize solar light harvesting in a 400 nm-thick silicon layer by tuning the coupling strength of incident radiation to quasiguided modes over a broad spectral range. The structure consists of a double layer PC. We show an enhancement of maximum achievable photocurrent density from 7.1 mA/cm 2 for an unstructured film to 21.8 mA/cm 2 for a structured film for normal incidence. This photocurrent density value approaches the limit of 26.5 mA/cm 2 , obtained using the Yablonovitch light trapping limit for the same volume of active material.
Journal
Proceedings of SPIE – SPIE
Published: May 10, 2010