Access the full text.
Sign up today, get DeepDyve free for 14 days.
Loading next page...
/lp/springer-journals/the-growth-of-thin-films-of-copper-chalcogenide-films-by-mocvd-and-Vo4L1AUZUj
References (8)
-
S. Massaccesi, S. Sanchez, J. Vedel (1993)
Cathodic deposition of copper selenide films on tin oxide in sulfate solutionsJournal of The Electrochemical Society, 140
-
R. O'brien, K. Santhanam (1992)
Incorporation of In into Copper Selenide Formation of Copper Indium Selenide Followed by Laser InterferometryJournal of The Electrochemical Society, 139
-
J. Fan, B. Palm (1984)
Optimal design of CdS- and Cd0.8Zn0.2S-based single-junction and multijunction solar cellsSolar Cells, 12
-
G. Hodes, D. Cahen (1986)
Electrodeposition of CuInSe2 and CuInS2 filmsSolar Cells, 16
-
P. O’Brien, D. Otway, J. Walsh (1998)
Novel precursors for the growth of α-In2S3: trisdialkyldithiocarbamates of indiumThin Solid Films, 315
-
R. Nomura, Kouichi Kanaya, H. Matsuda (1989)
Preparation of copper sulfide powders and thin films by thermal decomposition of copper dithiocarbamate complexesIndustrial & Engineering Chemistry Research, 28
-
R. Nomura, Y. Seki, H. Matsuda (1992)
Preparation of CuIn5S8 thin films by single-source organometallic chemical vapour depositionThin Solid Films, 209
-
C. Estrada, P. Nair, M. Nair, R. Zingaro, E. Meyers (1994)
Chemical Bath Deposition of ZnSe and CuSe Thin Films Using N,N‐DimethylselenoureaJournal of The Electrochemical Society, 141
- Publisher
- Springer Journals
- Copyright
- Copyright © 2002 by Kluwer Academic Publishers
- Subject
- Materials Science; Optical and Electronic Materials; Characterization and Evaluation of Materials
- ISSN
- 0957-4522
- eISSN
- 1573-482X
- DOI
- 10.1023/A:1019665428255
- Publisher site
- See Article on Publisher Site
Abstract
Highly oriented crystalline films of copper sulfide and copper selenide have been grown on glass by low-pressure metal-organic chemical vapor deposition (LP-MOCVD) and by aerosol-assisted chemical vapor deposition (AACVD), using the novel air-stable compounds Cu(E2CNMenHex)2]* (where E=S,Se). Thin films of non-stoichiometric cubic CuS and CuSe have been deposited in the temperature range 450–500 °C.
Journal
Journal of Materials Science: Materials in Electronics – Springer Journals
Published: Oct 12, 2004