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CVD of Nanophasic (Zn, Cd)S Thin Films: From Multi‐Layers to Solid Solutions

CVD of Nanophasic (Zn, Cd)S Thin Films: From Multi‐Layers to Solid Solutions Nanostructured ZnxCd1 – xS (0 ≤ x ≤ 1) thin films were synthesized by CVD on SiO2 substrates using M(O‐iPrXan)2 (M = Zn,Cd; O‐iPrXan = S2COCH(CH3)2) as precursor compounds. The method of preparation used consisted in the sequential deposition of single‐phase MS coatings (M = Zn,Cd) at 300 °C in a N2 flow, followed by ex‐situ annealing in an inert atmosphere at various temperatures in the range 400–700 °C. The obtained specimens were thoroughly characterized before and after thermal treatments, paying particular attention to their structure, composition, morphology, and optical properties. Annealing in N2 at 600 °C for 3 h resulted in the formation of a homogeneous ZnxCd1 – xS solid solution. Lower temperatures did not produce a uniform sample composition, while more severe annealing conditions induced CdS sublimation. Moreover, a compositional control of the ZnxCd1 – xS ternary phase could be achieved by varying the ZnS overlayer deposition time. Irrespective of the annealing conditions, all the obtained films were contaminant‐free and nanophasic (∅︁ ≈25 nm), and possessed a hexagonal crystal structure the lattice parameters of which decreased linearly with increasing zinc molar fraction. A parallel evolution of optical absorption spectra was also observed. In the present paper, the interrelations between film properties and processing conditions are investigated, focusing particularly on the (Zn,Cd)S evolution to ZnxCd1 – xS solid solutions. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Chemical Vapor Deposition Wiley

CVD of Nanophasic (Zn, Cd)S Thin Films: From Multi‐Layers to Solid Solutions

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Publisher
Wiley
Copyright
Copyright © 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim
ISSN
0948-1907
eISSN
1521-3862
DOI
10.1002/cvde.200306292
Publisher site
See Article on Publisher Site

Abstract

Nanostructured ZnxCd1 – xS (0 ≤ x ≤ 1) thin films were synthesized by CVD on SiO2 substrates using M(O‐iPrXan)2 (M = Zn,Cd; O‐iPrXan = S2COCH(CH3)2) as precursor compounds. The method of preparation used consisted in the sequential deposition of single‐phase MS coatings (M = Zn,Cd) at 300 °C in a N2 flow, followed by ex‐situ annealing in an inert atmosphere at various temperatures in the range 400–700 °C. The obtained specimens were thoroughly characterized before and after thermal treatments, paying particular attention to their structure, composition, morphology, and optical properties. Annealing in N2 at 600 °C for 3 h resulted in the formation of a homogeneous ZnxCd1 – xS solid solution. Lower temperatures did not produce a uniform sample composition, while more severe annealing conditions induced CdS sublimation. Moreover, a compositional control of the ZnxCd1 – xS ternary phase could be achieved by varying the ZnS overlayer deposition time. Irrespective of the annealing conditions, all the obtained films were contaminant‐free and nanophasic (∅︁ ≈25 nm), and possessed a hexagonal crystal structure the lattice parameters of which decreased linearly with increasing zinc molar fraction. A parallel evolution of optical absorption spectra was also observed. In the present paper, the interrelations between film properties and processing conditions are investigated, focusing particularly on the (Zn,Cd)S evolution to ZnxCd1 – xS solid solutions.

Journal

Chemical Vapor Deposition – Wiley

Published: Aug 1, 2004

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