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Spin Degree of Freedom in a Two-Dimensional Electron Liquid

Spin Degree of Freedom in a Two-Dimensional Electron Liquid We have investigated correlation between spin polarization and magnetotransport in a high mobility silicon inversion layer which shows the metal-insulator transition. Increase in the resistivity in a parallel magnetic field reaches saturation at the critical field for the full polarization evaluated from an analysis of low-field Shubnikov–de Haas oscillations. By rotating the sample at various total strength of the magnetic field, we found that the normal component of the magnetic field at minima in the diagonal resistivity increases linearly with the concentration of “spin-up” electrons. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Physical Review Letters American Physical Society (APS)

Spin Degree of Freedom in a Two-Dimensional Electron Liquid

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References (3)

Publisher
American Physical Society (APS)
Copyright
Copyright © 1999 The American Physical Society
ISSN
1079-7114
DOI
10.1103/PhysRevLett.82.3875
Publisher site
See Article on Publisher Site

Abstract

We have investigated correlation between spin polarization and magnetotransport in a high mobility silicon inversion layer which shows the metal-insulator transition. Increase in the resistivity in a parallel magnetic field reaches saturation at the critical field for the full polarization evaluated from an analysis of low-field Shubnikov–de Haas oscillations. By rotating the sample at various total strength of the magnetic field, we found that the normal component of the magnetic field at minima in the diagonal resistivity increases linearly with the concentration of “spin-up” electrons.

Journal

Physical Review LettersAmerican Physical Society (APS)

Published: May 10, 1999

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