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Characteristics of ZnO : As/GaN heterojunction diodes obtained by PA-MBE

Characteristics of ZnO : As/GaN heterojunction diodes obtained by PA-MBE We report on the characterization of wide-band-gap heterojunction diodes based on the p-ZnO/n-GaN material system. The layer structure consists of 11 µm GaN on sapphire substrates and As-doped ZnO film of thickness 0.4 µm obtained by plasma-assisted molecular beam epitaxy (PA-MBE). The quality of the heterojunction was examined by x-ray diffraction, atomic force microscopy and scanning electron microscopy. The arsenic concentration in ZnO, measured by secondary ion mass spectroscopy (SIMS), is 5 × 1020 cm−3. The maximum forward-to-reverse current ratio IF/IR is of about 105 in the applied voltage ±3 V, a very good result for this type of heterojunction. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Physics D: Applied Physics IOP Publishing

Characteristics of ZnO : As/GaN heterojunction diodes obtained by PA-MBE

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Copyright
Copyright 2013 IOP Publishing Ltd
ISSN
0022-3727
eISSN
1361-6463
DOI
10.1088/0022-3727/46/3/035101
Publisher site
See Article on Publisher Site

Abstract

We report on the characterization of wide-band-gap heterojunction diodes based on the p-ZnO/n-GaN material system. The layer structure consists of 11 µm GaN on sapphire substrates and As-doped ZnO film of thickness 0.4 µm obtained by plasma-assisted molecular beam epitaxy (PA-MBE). The quality of the heterojunction was examined by x-ray diffraction, atomic force microscopy and scanning electron microscopy. The arsenic concentration in ZnO, measured by secondary ion mass spectroscopy (SIMS), is 5 × 1020 cm−3. The maximum forward-to-reverse current ratio IF/IR is of about 105 in the applied voltage ±3 V, a very good result for this type of heterojunction.

Journal

Journal of Physics D: Applied Physics – IOP Publishing

Published: Jan 23, 2013

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