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Investigation of Negative Capacitance in Admittance Analysis of Metal Semiconductors Interlayered With ZnFe<sub>2</sub>O<sub>4</sub> Doped PVA

Investigation of Negative Capacitance in Admittance Analysis of Metal Semiconductors Interlayered... http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png IEEE Transactions on Nanotechnology CrossRef

Investigation of Negative Capacitance in Admittance Analysis of Metal Semiconductors Interlayered With ZnFe<sub>2</sub>O<sub>4</sub> Doped PVA

IEEE Transactions on Nanotechnology , Volume 23: 102-108 – Jan 1, 2024

Investigation of Negative Capacitance in Admittance Analysis of Metal Semiconductors Interlayered With ZnFe<sub>2</sub>O<sub>4</sub> Doped PVA

IEEE Transactions on Nanotechnology , Volume 23: 102-108 – Jan 1, 2024

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Publisher
CrossRef
ISSN
1536-125X
DOI
10.1109/tnano.2024.3353379
Publisher site
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Abstract

Journal

IEEE Transactions on NanotechnologyCrossRef

Published: Jan 1, 2024

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