Tribologically-induced Damage in Cutting and Polishing of Silicon

Tribologically-induced Damage in Cutting and Polishing of Silicon This paper discusses the influence of tribology on the mechanical properties of cutting, shaping and forming silicon wafers. These processes, such as multi wire slurry sawing, diamond wire sawing, lapping and grinding, Chemical Mechanical Polishing (CMP), and dicing, utilize either a two-body or a three-body material removal, where the fundamental cutting process results from micro-fracturing of silicon by the hard abrasives. There are specific types of defects and related fracture strength characteristics for each process. The associated surface and subsurface damage, especially microcracks, have a dominant effect on the fracture strength of the silicon substrates, even playing a more significant role than edge chipping. There is a need to reduce the surface and subsurface damage, possibly through ductile regime machining/polishing, to improve the mechanical strength. Advances in Materials Science and Applications World Academic Publishing Co.

Tribologically-induced Damage in Cutting and Polishing of Silicon

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