IntroductionOver the past decade, one‐dimensional (1D) semiconductors attracted much attention because of their unique electronic and optoelectronic properties and promising applications as functional components in nanoscale electronic and optoelectronic devices. Among a large variety of 1D semiconductors, metal oxides, including ZnO, SnO2, Ga2O3, In2O3, Nb2O3, and TiO2, have attracted particular interest. Significant research effort has been devoted to the exploration of 1D metal oxides as photodetectors and the investigation of their photoconductive response. Recently, it has been realized that for functional nano‐systems, self‐powered photodetectors without external power sources are of high interest. However, almost all reported self‐powered devices exhibit a considerable dark current at nominal zero bias. Among the binary metal oxides, SnO2 is an n‐type semiconductor with a wide direct bandgap of about 3.6 eV and high transparency in the visible spectral range. Thus, it has been considered as a promising material for ultraviolet (UV) photodetectors. Up to now, various SnO2 nanostructures have been synthesized with well‐controlled morphology. However, investigations on SnO2 nanostructure‐based photodetectors with high on/off current ratio, high response speed, high spectral responsivity (Rλ), and high external quantum efficiency (EQE) are rare. The performance of the photodetectors is often limited by intrinsic defects and absorption–desorption processes at
Physica Status Solidi (B) Basic Solid State Physics – Wiley
Published: Jan 1, 2018
Keywords: ; ; ;
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