Synthesis of SnO2 Nanowires Using SnI2 as Precursor and Their Application as High‐Performance Self‐Powered Ultraviolet Photodetectors

Synthesis of SnO2 Nanowires Using SnI2 as Precursor and Their Application as High‐Performance... IntroductionOver the past decade, one‐dimensional (1D) semiconductors attracted much attention because of their unique electronic and optoelectronic properties and promising applications as functional components in nanoscale electronic and optoelectronic devices. Among a large variety of 1D semiconductors, metal oxides, including ZnO, SnO2, Ga2O3, In2O3, Nb2O3, and TiO2, have attracted particular interest. Significant research effort has been devoted to the exploration of 1D metal oxides as photodetectors and the investigation of their photoconductive response. Recently, it has been realized that for functional nano‐systems, self‐powered photodetectors without external power sources are of high interest. However, almost all reported self‐powered devices exhibit a considerable dark current at nominal zero bias. Among the binary metal oxides, SnO2 is an n‐type semiconductor with a wide direct bandgap of about 3.6 eV and high transparency in the visible spectral range. Thus, it has been considered as a promising material for ultraviolet (UV) photodetectors. Up to now, various SnO2 nanostructures have been synthesized with well‐controlled morphology. However, investigations on SnO2 nanostructure‐based photodetectors with high on/off current ratio, high response speed, high spectral responsivity (Rλ), and high external quantum efficiency (EQE) are rare. The performance of the photodetectors is often limited by intrinsic defects and absorption–desorption processes at http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Physica Status Solidi (B) Basic Solid State Physics Wiley

Synthesis of SnO2 Nanowires Using SnI2 as Precursor and Their Application as High‐Performance Self‐Powered Ultraviolet Photodetectors

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Publisher
Wiley Subscription Services, Inc., A Wiley Company
Copyright
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
ISSN
0370-1972
eISSN
1521-3951
D.O.I.
10.1002/pssb.201700426
Publisher site
See Article on Publisher Site

Abstract

IntroductionOver the past decade, one‐dimensional (1D) semiconductors attracted much attention because of their unique electronic and optoelectronic properties and promising applications as functional components in nanoscale electronic and optoelectronic devices. Among a large variety of 1D semiconductors, metal oxides, including ZnO, SnO2, Ga2O3, In2O3, Nb2O3, and TiO2, have attracted particular interest. Significant research effort has been devoted to the exploration of 1D metal oxides as photodetectors and the investigation of their photoconductive response. Recently, it has been realized that for functional nano‐systems, self‐powered photodetectors without external power sources are of high interest. However, almost all reported self‐powered devices exhibit a considerable dark current at nominal zero bias. Among the binary metal oxides, SnO2 is an n‐type semiconductor with a wide direct bandgap of about 3.6 eV and high transparency in the visible spectral range. Thus, it has been considered as a promising material for ultraviolet (UV) photodetectors. Up to now, various SnO2 nanostructures have been synthesized with well‐controlled morphology. However, investigations on SnO2 nanostructure‐based photodetectors with high on/off current ratio, high response speed, high spectral responsivity (Rλ), and high external quantum efficiency (EQE) are rare. The performance of the photodetectors is often limited by intrinsic defects and absorption–desorption processes at

Journal

Physica Status Solidi (B) Basic Solid State PhysicsWiley

Published: Jan 1, 2018

Keywords: ; ; ;

References

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