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Synergistic Effect of Single‐Walled Carbon Nanotubes and PEDOT:PSS in Thin Film Amorphous Silicon Hybrid Solar Cell

Synergistic Effect of Single‐Walled Carbon Nanotubes and PEDOT:PSS in Thin Film Amorphous Silicon... IntroductionUnder current development of solar cells, thin film technology with minimum material consumption allows fabrication of low cost devices. Amorphous silicon (a‐Si) is promising material due to its unique mechanical, electrical and optical properties, which makes them compatible with roll‐to‐roll manufacturing and flexible device concept. Solar cells based on hydrogenated amorphous silicon (a‐Si:H) usually have either p‐i‐n or n‐i‐p architecture. The presence of intrinsic layer is essential for extended electric field at the origin of photo‐generation between the p‐ and n‐layers. This assists in carrier travel and immediate separation of electrons and holes to avoid recombination due to extremely short travel distances caused by shorter lifetime of photo‐generated carriers in a‐Si:H. Typically in a‐Si:H thin film, the p‐doped layer is obtained by plasma enhanced chemical vapor deposition of gas mixture containing toxic diborane (B2H6) gas at relatively high temperature.An alternative to replace p‐a‐Si:H layer is a SWCNT film. Exposed to air, SWCNTs absorb oxygen and becomes p‐type semiconductor. The optoelectrical, chemical and mechanical properties of SWCNTs make them applicable in solar cells as a p‐layer. SWCNT films on a contact with i‐a‐Si:H layer form heterojunction. It is important to have a continuous contact between SWCNTs and a‐Si:H for an http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Physica Status Solidi (B) Basic Solid State Physics Wiley

Synergistic Effect of Single‐Walled Carbon Nanotubes and PEDOT:PSS in Thin Film Amorphous Silicon Hybrid Solar Cell

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Publisher
Wiley
Copyright
"© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim"
ISSN
0370-1972
eISSN
1521-3951
DOI
10.1002/pssb.201700557
Publisher site
See Article on Publisher Site

Abstract

IntroductionUnder current development of solar cells, thin film technology with minimum material consumption allows fabrication of low cost devices. Amorphous silicon (a‐Si) is promising material due to its unique mechanical, electrical and optical properties, which makes them compatible with roll‐to‐roll manufacturing and flexible device concept. Solar cells based on hydrogenated amorphous silicon (a‐Si:H) usually have either p‐i‐n or n‐i‐p architecture. The presence of intrinsic layer is essential for extended electric field at the origin of photo‐generation between the p‐ and n‐layers. This assists in carrier travel and immediate separation of electrons and holes to avoid recombination due to extremely short travel distances caused by shorter lifetime of photo‐generated carriers in a‐Si:H. Typically in a‐Si:H thin film, the p‐doped layer is obtained by plasma enhanced chemical vapor deposition of gas mixture containing toxic diborane (B2H6) gas at relatively high temperature.An alternative to replace p‐a‐Si:H layer is a SWCNT film. Exposed to air, SWCNTs absorb oxygen and becomes p‐type semiconductor. The optoelectrical, chemical and mechanical properties of SWCNTs make them applicable in solar cells as a p‐layer. SWCNT films on a contact with i‐a‐Si:H layer form heterojunction. It is important to have a continuous contact between SWCNTs and a‐Si:H for an

Journal

Physica Status Solidi (B) Basic Solid State Physics – Wiley

Published: Jan 1, 2018

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