IntroductionUnder current development of solar cells, thin film technology with minimum material consumption allows fabrication of low cost devices. Amorphous silicon (a‐Si) is promising material due to its unique mechanical, electrical and optical properties, which makes them compatible with roll‐to‐roll manufacturing and flexible device concept. Solar cells based on hydrogenated amorphous silicon (a‐Si:H) usually have either p‐i‐n or n‐i‐p architecture. The presence of intrinsic layer is essential for extended electric field at the origin of photo‐generation between the p‐ and n‐layers. This assists in carrier travel and immediate separation of electrons and holes to avoid recombination due to extremely short travel distances caused by shorter lifetime of photo‐generated carriers in a‐Si:H. Typically in a‐Si:H thin film, the p‐doped layer is obtained by plasma enhanced chemical vapor deposition of gas mixture containing toxic diborane (B2H6) gas at relatively high temperature.An alternative to replace p‐a‐Si:H layer is a SWCNT film. Exposed to air, SWCNTs absorb oxygen and becomes p‐type semiconductor. The optoelectrical, chemical and mechanical properties of SWCNTs make them applicable in solar cells as a p‐layer. SWCNT films on a contact with i‐a‐Si:H layer form heterojunction. It is important to have a continuous contact between SWCNTs and a‐Si:H for an
Physica Status Solidi (B) Basic Solid State Physics – Wiley
Published: Jan 1, 2018
Keywords: ; ; ; ; ;
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