IntroductionGroup III‐nitrides attracted much attention in the development of optical and quantum optical devices, operating in the UV spectral range. Especially, quantum dots (QDs) are used for many applications like QD‐lasers, single photon emitters, and QD‐detectors. Stacking of the QDs is an appropriate way to increase the number of QDs in the active region. Due to the stacked QDs in three dimensions, quantum dot lasers are a promising candidate for optoelectronic devices. In the last years, stacked hexagonal GaN (h‐GaN) QDs have already been realized indicating an increase in room temperature photoluminescence intensity with increasing number of stacked QD layers. However, the hexagonal phase exhibits an internal field causing a reduced recombination probability. This may be overcome by using zincblende cubic GaN (c‐GaN), where no polarization fields in (001) growth direction exist. Only few groups are working with this metastable phase. First results for QD stacking of c‐GaN QDs is shown by Martinez‐Guerrero et al. Bürger et al. already published the growth of a single layer of c‐GaN QDs in SK growth mode. Single‐photon emission from these QDs is also demonstrated. The QDs show radiative lifetimes about one order of magnitude shorter compared to hexagonal, polar GaN QDs, which
Physica Status Solidi (B) Basic Solid State Physics – Wiley
Published: Jan 1, 2018
Keywords: ; ; ;
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