Get 20M+ Full-Text Papers For Less Than $1.50/day. Start a 14-Day Trial for You or Your Team.

Learn More →

Solution Processable Direct Bandgap Copper‐Silver‐Bismuth Iodide Photovoltaics: Compositional Control of Dimensionality and Optoelectronic Properties

Solution Processable Direct Bandgap Copper‐Silver‐Bismuth Iodide Photovoltaics: Compositional... The search for lead‐free alternatives to lead‐halide perovskite photovoltaic materials resulted in the discovery of copper(I)‐silver(I)‐bismuth(III) halides exhibiting promising properties for optoelectronic applications. The present work demonstrates a solution‐based synthesis of uniform CuxAgBiI4+x thin films and scrutinizes the effects of x on the phase composition, dimensionality, optoelectronic properties, and photovoltaic performance. Formation of pure 3D CuAgBiI5 at x = 1, 2D Cu2AgBiI6 at x = 2, and a mix of the two at 1 < x < 2 is demonstrated. Despite lower structural dimensionality, Cu2AgBiI6 has broader optical absorption with a direct bandgap of 1.89 ± 0.05 eV, a valence band level at ‐5.25 eV, improved carrier lifetime, and higher recombination resistance as compared to CuAgBiI5. These differences are mirrored in the power conversion efficiencies of the CuAgBiI5 and Cu2AgBiI6 solar cells under 1 sun of 1.01 ± 0.06% and 2.39 ± 0.05%, respectively. The latter value is the highest reported for this class of materials owing to the favorable film morphology provided by the hot‐casting method. Future performance improvements might emerge from the optimization of the Cu2AgBiI6 layer thickness to match the carrier diffusion length of ≈40–50 nm. Nonencapsulated Cu2AgBiI6 solar cells display storage stability over 240 days. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Advanced Energy Materials Wiley

Solution Processable Direct Bandgap Copper‐Silver‐Bismuth Iodide Photovoltaics: Compositional Control of Dimensionality and Optoelectronic Properties

Download PDF
15 pages

Loading next page...
 
/lp/wiley/solution-processable-direct-bandgap-copper-silver-bismuth-iodide-mdQ8dq2g87
Publisher
Wiley
Copyright
© 2022 Wiley‐VCH GmbH
ISSN
1614-6832
eISSN
1614-6840
DOI
10.1002/aenm.202201482
Publisher site
See Article on Publisher Site

Abstract

The search for lead‐free alternatives to lead‐halide perovskite photovoltaic materials resulted in the discovery of copper(I)‐silver(I)‐bismuth(III) halides exhibiting promising properties for optoelectronic applications. The present work demonstrates a solution‐based synthesis of uniform CuxAgBiI4+x thin films and scrutinizes the effects of x on the phase composition, dimensionality, optoelectronic properties, and photovoltaic performance. Formation of pure 3D CuAgBiI5 at x = 1, 2D Cu2AgBiI6 at x = 2, and a mix of the two at 1 < x < 2 is demonstrated. Despite lower structural dimensionality, Cu2AgBiI6 has broader optical absorption with a direct bandgap of 1.89 ± 0.05 eV, a valence band level at ‐5.25 eV, improved carrier lifetime, and higher recombination resistance as compared to CuAgBiI5. These differences are mirrored in the power conversion efficiencies of the CuAgBiI5 and Cu2AgBiI6 solar cells under 1 sun of 1.01 ± 0.06% and 2.39 ± 0.05%, respectively. The latter value is the highest reported for this class of materials owing to the favorable film morphology provided by the hot‐casting method. Future performance improvements might emerge from the optimization of the Cu2AgBiI6 layer thickness to match the carrier diffusion length of ≈40–50 nm. Nonencapsulated Cu2AgBiI6 solar cells display storage stability over 240 days.

Journal

Advanced Energy Materials – Wiley

Published: Aug 1, 2022

Keywords: CuAgBiI 5; Cu 2 AgBiI 6; solar cells; thin film

References