Sb Incorporation in Wurtzite and Zinc Blende InAs1−xSbx Branches on InAs Template Nanowires

Sb Incorporation in Wurtzite and Zinc Blende InAs1−xSbx Branches on InAs Template Nanowires The physical properties of material largely depend on their crystal structure. Nanowire growth is an important method for attaining metastable crystal structures in III–V semiconductors, giving access to advantageous electronic and surface properties. Antimonides are an exception, as growing metastable wurtzite structure has proven to be challenging. As a result, the properties of these materials remain unknown. One promising means of accessing wurtzite antimonides is to use a wurtzite template to facilitate their growth. Here, a template technique using branched nanowire growth for realizing wurtzite antimonide material is demonstrated. On wurtzite InAs trunks, InAs1−xSbx branch nanowires at different Sb vapor phase compositions are grown. For comparison, branches on zinc blende nanowire trunks are also grown under identical conditions. Studying the crystal structure and the material composition of the grown branches at different xv shows that the Sb incorporation is higher in zinc blende than in wurtzite. Branches grown on wurtzite trunks are usually correlated with stacking defects in the trunk, leading to the emergence of a zinc blende segment of higher Sb content growing parallel to the wurtzite structure within a branch. However, the average amount of Sb incorporated within the branch is determined by the vapor phase composition. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Small Wiley

Sb Incorporation in Wurtzite and Zinc Blende InAs1−xSbx Branches on InAs Template Nanowires

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Publisher
Wiley Subscription Services, Inc., A Wiley Company
Copyright
© 2018 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim
ISSN
1613-6810
eISSN
1613-6829
D.O.I.
10.1002/smll.201703785
Publisher site
See Article on Publisher Site

Abstract

The physical properties of material largely depend on their crystal structure. Nanowire growth is an important method for attaining metastable crystal structures in III–V semiconductors, giving access to advantageous electronic and surface properties. Antimonides are an exception, as growing metastable wurtzite structure has proven to be challenging. As a result, the properties of these materials remain unknown. One promising means of accessing wurtzite antimonides is to use a wurtzite template to facilitate their growth. Here, a template technique using branched nanowire growth for realizing wurtzite antimonide material is demonstrated. On wurtzite InAs trunks, InAs1−xSbx branch nanowires at different Sb vapor phase compositions are grown. For comparison, branches on zinc blende nanowire trunks are also grown under identical conditions. Studying the crystal structure and the material composition of the grown branches at different xv shows that the Sb incorporation is higher in zinc blende than in wurtzite. Branches grown on wurtzite trunks are usually correlated with stacking defects in the trunk, leading to the emergence of a zinc blende segment of higher Sb content growing parallel to the wurtzite structure within a branch. However, the average amount of Sb incorporated within the branch is determined by the vapor phase composition.

Journal

SmallWiley

Published: Jan 1, 2018

Keywords: ; ; ; ;

References

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