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pH‐ISFET with NMOS technology

pH‐ISFET with NMOS technology The construction of a pH‐ISFET (ion‐selective field effect transistor) fabricated with standard negative‐channel MOS technology, compatible with complementary MOS technology, and using silicon nitride as a pH‐sensitive material, is described. Its main analytical characteristics are discussed. The resulting calibration plot is linear over the pH range from 2 to 11; with a slope of 54 mV per pH unit. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Electroanalysis Wiley

pH‐ISFET with NMOS technology

Electroanalysis , Volume 3 (4‐5) – May 1, 1991

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References (9)

Publisher
Wiley
Copyright
Copyright © 1991 VCH Publishers, Inc.
ISSN
1040-0397
eISSN
1521-4109
DOI
10.1002/elan.1140030418
Publisher site
See Article on Publisher Site

Abstract

The construction of a pH‐ISFET (ion‐selective field effect transistor) fabricated with standard negative‐channel MOS technology, compatible with complementary MOS technology, and using silicon nitride as a pH‐sensitive material, is described. Its main analytical characteristics are discussed. The resulting calibration plot is linear over the pH range from 2 to 11; with a slope of 54 mV per pH unit.

Journal

ElectroanalysisWiley

Published: May 1, 1991

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