Investigations on the parameters limiting the performance of CdS/SnS solar cell

Investigations on the parameters limiting the performance of CdS/SnS solar cell Debutant analysis of the parameters impeding the efficiency of the CdS/SnS‐based photovoltaic device is the chief novelty of the present report. We have developed thin‐film heterojunction solar cells with the stacking sequence: glass/Al‐doped ZnO/CdS/SnS/In. The two crucial issues, band offsets and cell studies, are discussed in detail. The band offsets at the CdS/SnS interface have been systematically evaluated by semidirect X‐ray photoelectron spectroscopy. The calculated valance band offset (ΔEv) and conduction band offsets (ΔEc) are found to be 1.46 and −0.36 eV, respectively. The negative value of conduction band offset indicates that the junction formed is of type‐II (staggered‐type heterojunction). Electrical studies revealed power conversion efficiency of 0.32% with VOC, JSC, and fill factor as 170.61 mV, 7.26 mA/cm2, and 0.26, respectively. The impact of the offset values on the cell studies is clearly elucidated. The reasons for the low efficiency are spotlighted. Collectively, this article gives the overview of the systematic approach undertaken to get obvious picture about the barriers that limit the conversion efficiency of the CdS/SnS‐based solar cell and the measurements required for enhancing the efficiency of the SnS‐based solar device. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png International Journal of Energy Research Wiley

Investigations on the parameters limiting the performance of CdS/SnS solar cell

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Publisher
Wiley Subscription Services, Inc., A Wiley Company
Copyright
Copyright © 2018 John Wiley & Sons, Ltd.
ISSN
0363-907X
eISSN
1099-114X
D.O.I.
10.1002/er.3972
Publisher site
See Article on Publisher Site

Abstract

Debutant analysis of the parameters impeding the efficiency of the CdS/SnS‐based photovoltaic device is the chief novelty of the present report. We have developed thin‐film heterojunction solar cells with the stacking sequence: glass/Al‐doped ZnO/CdS/SnS/In. The two crucial issues, band offsets and cell studies, are discussed in detail. The band offsets at the CdS/SnS interface have been systematically evaluated by semidirect X‐ray photoelectron spectroscopy. The calculated valance band offset (ΔEv) and conduction band offsets (ΔEc) are found to be 1.46 and −0.36 eV, respectively. The negative value of conduction band offset indicates that the junction formed is of type‐II (staggered‐type heterojunction). Electrical studies revealed power conversion efficiency of 0.32% with VOC, JSC, and fill factor as 170.61 mV, 7.26 mA/cm2, and 0.26, respectively. The impact of the offset values on the cell studies is clearly elucidated. The reasons for the low efficiency are spotlighted. Collectively, this article gives the overview of the systematic approach undertaken to get obvious picture about the barriers that limit the conversion efficiency of the CdS/SnS‐based solar cell and the measurements required for enhancing the efficiency of the SnS‐based solar device.

Journal

International Journal of Energy ResearchWiley

Published: Jan 1, 2018

Keywords: ; ; ;

References

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