Inductive Peaking Technology for Bandwidth Enhancement in Carbon Nanotube Bundle Interconnect

Inductive Peaking Technology for Bandwidth Enhancement in Carbon Nanotube Bundle Interconnect IntroductionWith integrated circuits shrinking into the nanometer scale, the performance degradation and reliability problems for traditional copper interconnects have emerged in recent years. As one of the most promising candidate materials in nanometer regime, carbon nanotubes (CNTs) have received a number of scholars’ attention in view of unique mechanical, electrical, and thermal properties. Compared with copper material, CNTs have longer mean free path (MFP) which can reach several micrometers. So it can provide ballistic transport for shorter interconnects, which leads to the lower resistivity in CNT interconnects. Furthermore, current carrying density of CNTs can exceed 1010 A cm−2 without any damage, which greatly alleviates the electro‐migration problem induced by surface scattering and grain‐boundary scattering and thus improves the reliability of integrated circuit. CNTs can be either metallic or semiconducting in the light of their chirality. Nevertheless, only metallic CNTs are preferred for interconnect. To reduce the resistance of isolated CNT, a great quantity of CNTs need to be in parallel to form CNT bundle interconnects in practical applications.On account of so many advantages, plenty of meaningful explorations about CNT interconnects have been made, including theoretical investigations and experimental analyses. Generally, the equivalent model of the traditional interconnect mainly includes the lumped http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Physica Status Solidi (A) Applications and Materials Science Wiley

Inductive Peaking Technology for Bandwidth Enhancement in Carbon Nanotube Bundle Interconnect

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Publisher
Wiley
Copyright
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
ISSN
1862-6300
eISSN
1862-6319
D.O.I.
10.1002/pssa.201700459
Publisher site
See Article on Publisher Site

Abstract

IntroductionWith integrated circuits shrinking into the nanometer scale, the performance degradation and reliability problems for traditional copper interconnects have emerged in recent years. As one of the most promising candidate materials in nanometer regime, carbon nanotubes (CNTs) have received a number of scholars’ attention in view of unique mechanical, electrical, and thermal properties. Compared with copper material, CNTs have longer mean free path (MFP) which can reach several micrometers. So it can provide ballistic transport for shorter interconnects, which leads to the lower resistivity in CNT interconnects. Furthermore, current carrying density of CNTs can exceed 1010 A cm−2 without any damage, which greatly alleviates the electro‐migration problem induced by surface scattering and grain‐boundary scattering and thus improves the reliability of integrated circuit. CNTs can be either metallic or semiconducting in the light of their chirality. Nevertheless, only metallic CNTs are preferred for interconnect. To reduce the resistance of isolated CNT, a great quantity of CNTs need to be in parallel to form CNT bundle interconnects in practical applications.On account of so many advantages, plenty of meaningful explorations about CNT interconnects have been made, including theoretical investigations and experimental analyses. Generally, the equivalent model of the traditional interconnect mainly includes the lumped

Journal

Physica Status Solidi (A) Applications and Materials ScienceWiley

Published: Jan 1, 2018

Keywords: ; ; ;

References

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