Epitaxial Growth of Thick Polar and Semipolar InN Films on Yttria‐Stabilized Zirconia Using Pulsed Sputtering Deposition

Epitaxial Growth of Thick Polar and Semipolar InN Films on Yttria‐Stabilized Zirconia Using... IntroductionInN and high‐In‐content InGaN are promising materials for high‐speed electron devices, long‐wavelength light‐emitting devices, and high‐efficiency solar cells. However, it is difficult to grow high‐quality nitride films with high In contents because of the lack of appropriate lattice‐matched bulk substrates. The use of a thick and relaxed InN template is a reasonable approach to fabricate devices with high‐In‐content nitrides. While InN single crystals are usually grown by molecular beam epitaxy (MBE) or metal‐organic vapor‐phase epitaxy (MOVPE), these methods are not appropriate for the growth of thick layers because of their low growth rates (∼1 µm h−1). Therefore, to develop InN substrates, a high‐rate deposition technique should be developed.Recently, we found that a newly developed technique for nitride growth called pulsed sputtering deposition (PSD) allows the fabrication of high‐quality nitride films at high growth rate. The high growth rates achieved by this method can be attributed to the immersion of the sample in nitrogen plasma with a high density of active nitrogen radicals. PSD is particularly suitable for InN growth because its growth temperature is lower than those of MBE and MOVPE. In PSD growth, a pulsed supply of indium atoms with high kinetic energy enhances the migration of adatoms on the http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Physica Status Solidi (B) Basic Solid State Physics Wiley

Epitaxial Growth of Thick Polar and Semipolar InN Films on Yttria‐Stabilized Zirconia Using Pulsed Sputtering Deposition

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Publisher
Wiley Subscription Services, Inc., A Wiley Company
Copyright
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
ISSN
0370-1972
eISSN
1521-3951
D.O.I.
10.1002/pssb.201700320
Publisher site
See Article on Publisher Site

Abstract

IntroductionInN and high‐In‐content InGaN are promising materials for high‐speed electron devices, long‐wavelength light‐emitting devices, and high‐efficiency solar cells. However, it is difficult to grow high‐quality nitride films with high In contents because of the lack of appropriate lattice‐matched bulk substrates. The use of a thick and relaxed InN template is a reasonable approach to fabricate devices with high‐In‐content nitrides. While InN single crystals are usually grown by molecular beam epitaxy (MBE) or metal‐organic vapor‐phase epitaxy (MOVPE), these methods are not appropriate for the growth of thick layers because of their low growth rates (∼1 µm h−1). Therefore, to develop InN substrates, a high‐rate deposition technique should be developed.Recently, we found that a newly developed technique for nitride growth called pulsed sputtering deposition (PSD) allows the fabrication of high‐quality nitride films at high growth rate. The high growth rates achieved by this method can be attributed to the immersion of the sample in nitrogen plasma with a high density of active nitrogen radicals. PSD is particularly suitable for InN growth because its growth temperature is lower than those of MBE and MOVPE. In PSD growth, a pulsed supply of indium atoms with high kinetic energy enhances the migration of adatoms on the

Journal

Physica Status Solidi (B) Basic Solid State PhysicsWiley

Published: Jan 1, 2018

Keywords: ; ;

References

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