IntroductionInN and high‐In‐content InGaN are promising materials for high‐speed electron devices, long‐wavelength light‐emitting devices, and high‐efficiency solar cells. However, it is difficult to grow high‐quality nitride films with high In contents because of the lack of appropriate lattice‐matched bulk substrates. The use of a thick and relaxed InN template is a reasonable approach to fabricate devices with high‐In‐content nitrides. While InN single crystals are usually grown by molecular beam epitaxy (MBE) or metal‐organic vapor‐phase epitaxy (MOVPE), these methods are not appropriate for the growth of thick layers because of their low growth rates (∼1 µm h−1). Therefore, to develop InN substrates, a high‐rate deposition technique should be developed.Recently, we found that a newly developed technique for nitride growth called pulsed sputtering deposition (PSD) allows the fabrication of high‐quality nitride films at high growth rate. The high growth rates achieved by this method can be attributed to the immersion of the sample in nitrogen plasma with a high density of active nitrogen radicals. PSD is particularly suitable for InN growth because its growth temperature is lower than those of MBE and MOVPE. In PSD growth, a pulsed supply of indium atoms with high kinetic energy enhances the migration of adatoms on the
Physica Status Solidi (B) Basic Solid State Physics – Wiley
Published: Jan 1, 2018
Keywords: ; ;
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