Enhanced Crystallinity of h‐BN Films Induced by Substrate Bias During Magnetron Sputtering

Enhanced Crystallinity of h‐BN Films Induced by Substrate Bias During Magnetron Sputtering IntroductionMonolayer and bilayer hexagonal boron nitride (h‐BN) have an important role as a lattice‐matched large band gap insulator for 2D devices made from graphene and dichalcogenide semiconductors. Also, reports over the last few years on the high temperature oxidation resistance of h‐BN films have shown their utility as a protective thin film capping layer. The most common means of growing h‐BN is by chemical vapor deposition (CVD) at high temperatures (≈1000 °C) on lattice matched substrates such as Cu or Ni. It has repeatedly been shown that polycrystalline flakes of h‐BN can be grown with a typical film thickness <10 monolayers, and these flakes can be transferred from the growth substrate to other surfaces with minimal damage. Recently, large millimeter‐sized h‐BN domains grown by ion beam sputtering on Ni substrates has been reported, and it is apparent that minimization of defects on the substrate is key to achieving large enough domains for electronic applications.For future technological applications, physical vapor deposition methods using pulsed lasers, ion beams, or magnetron sputtering are attractive for h‐BN film growth since physical vapor deposition is adaptable to large‐scale manufacturing and modern lithography processes. Since overall device performance is dominated by the degree of film homogeneity http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Physica Status Solidi (B) Basic Solid State Physics Wiley

Enhanced Crystallinity of h‐BN Films Induced by Substrate Bias During Magnetron Sputtering

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Publisher
Wiley Subscription Services, Inc., A Wiley Company
Copyright
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
ISSN
0370-1972
eISSN
1521-3951
D.O.I.
10.1002/pssb.201700458
Publisher site
See Article on Publisher Site

Abstract

IntroductionMonolayer and bilayer hexagonal boron nitride (h‐BN) have an important role as a lattice‐matched large band gap insulator for 2D devices made from graphene and dichalcogenide semiconductors. Also, reports over the last few years on the high temperature oxidation resistance of h‐BN films have shown their utility as a protective thin film capping layer. The most common means of growing h‐BN is by chemical vapor deposition (CVD) at high temperatures (≈1000 °C) on lattice matched substrates such as Cu or Ni. It has repeatedly been shown that polycrystalline flakes of h‐BN can be grown with a typical film thickness <10 monolayers, and these flakes can be transferred from the growth substrate to other surfaces with minimal damage. Recently, large millimeter‐sized h‐BN domains grown by ion beam sputtering on Ni substrates has been reported, and it is apparent that minimization of defects on the substrate is key to achieving large enough domains for electronic applications.For future technological applications, physical vapor deposition methods using pulsed lasers, ion beams, or magnetron sputtering are attractive for h‐BN film growth since physical vapor deposition is adaptable to large‐scale manufacturing and modern lithography processes. Since overall device performance is dominated by the degree of film homogeneity

Journal

Physica Status Solidi (B) Basic Solid State PhysicsWiley

Published: Jan 1, 2018

Keywords: ; ; ; ;

References

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