INTRODUCTIONLow temperature plasmas (LTPs) have attracted great interest in many years, as they have been widely used as tools for etching, surface modification, plasma treatment of materials and film deposition in semiconductor industry. Recently, with the great degree of miniaturization of today's semiconductor device on the nanometer scale, controlling of plasma processing parameters has attract increasing attention. Thus, overcoming the problems of damage and poor selectivity for etching, ascribed to high‐energy ion and electron bombardment to the substrate surface, has been increasingly important. This problem can be solved by using an electron beam(EB) driven LTP, as EB generated plasmas are characterized by low electron temperature (1 eV) and high plasma density (1016 m−3), as they can indeed provide a large flux of electron and ion with low energy compared to most molecular bond strength (5 eV). Ions are cold in LTPs, so reducing the electron temperature means reducing the ion and electron kinetic energy. The underlying physics is that high energy EB dominates the excitation and ionization processes, and both the beam electron and the daughter electron born from the ionization collision are cooled quickly to low temperature, since most of them participate the excitation and ionization collisions through colliding with the
Plasma Processes and Polymers – Wiley
Published: Jan 1, 2018
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