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Dopant‐Free Partial Rear Contacts Enabling 23% Silicon Solar Cells

Dopant‐Free Partial Rear Contacts Enabling 23% Silicon Solar Cells Over the past five years, there has been a significant increase in both the intensity of research and the performance of crystalline silicon devices which utilize metal compounds to form carrier‐selective heterocontacts. Such heterocontacts are less fundamentally limited and have the potential for lower costs compared to the current industry dominating heavily doped, directly metalized contacts. A low temperature (≤230 °C), TiOx/LiFx/Al electron heterocontact is presented here, which achieves mΩcm2 scale contact resistivities ρc on lowly doped n‐type substrates. As an extreme demonstration of the potential of this heterocontact, it is trialed in a newly developed, high efficiency n‐type solar cell architecture as a partial rear contact (PRC). Despite only contacting ≈1% of the rear surface area, an efficiency of greater than 23% is achieved, setting a new benchmark for n‐type solar cells featuring undoped PRCs and confirming the unusually low ρc of the TiOx/LiFx/Al contact. Finally, in contrast to previous versions of the n‐type undoped PRC cell, the performance of this cell is maintained after annealing at 350–400 °C, suggesting its compatibility with conventional surface passivation activation and sintering steps. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Advanced Energy Materials Wiley

Dopant‐Free Partial Rear Contacts Enabling 23% Silicon Solar Cells

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Publisher
Wiley
Copyright
"© 2019 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim"
ISSN
1614-6832
eISSN
1614-6840
DOI
10.1002/aenm.201803367
Publisher site
See Article on Publisher Site

Abstract

Over the past five years, there has been a significant increase in both the intensity of research and the performance of crystalline silicon devices which utilize metal compounds to form carrier‐selective heterocontacts. Such heterocontacts are less fundamentally limited and have the potential for lower costs compared to the current industry dominating heavily doped, directly metalized contacts. A low temperature (≤230 °C), TiOx/LiFx/Al electron heterocontact is presented here, which achieves mΩcm2 scale contact resistivities ρc on lowly doped n‐type substrates. As an extreme demonstration of the potential of this heterocontact, it is trialed in a newly developed, high efficiency n‐type solar cell architecture as a partial rear contact (PRC). Despite only contacting ≈1% of the rear surface area, an efficiency of greater than 23% is achieved, setting a new benchmark for n‐type solar cells featuring undoped PRCs and confirming the unusually low ρc of the TiOx/LiFx/Al contact. Finally, in contrast to previous versions of the n‐type undoped PRC cell, the performance of this cell is maintained after annealing at 350–400 °C, suggesting its compatibility with conventional surface passivation activation and sintering steps.

Journal

Advanced Energy Materials – Wiley

Published: Mar 1, 2019

Keywords: ; ;

References

  • Proc 18th IEEE Photovolt. Spec. Conf.
    Kane, D. E.; Swanson, R. M.
  • NIST Standard Reference Database Number 20