Aqueous Solution‐Processable, Flexible Thin‐Film Transistors Based on Crosslinked Chitosan Dielectric Thin Films

Aqueous Solution‐Processable, Flexible Thin‐Film Transistors Based on Crosslinked Chitosan... The hydrophilic character of chitosan (CS) limits its use as a gate dielectric material in thin‐film transistors (TFTs) based on aqueous solution‐processable semiconductor materials. In this study, this drawback is overcome through controlled crosslinking of CS and report, for the first time, its application to aqueous solution‐processable TFTs. In comparison to natural CS thin films, crosslinked chitosan (Cr‐CS) thin films are hydrophobic. The dielectric properties of Cr‐CS thin films are explored through fabrication of metal–insulator–metal devices on a flexible substrate. Compared to natural CS, the Cr‐CS dielectric thin films show enhanced environmental and water stabilities, with a high breakdown voltage (10 V) and low leakage current (0.02 nA). The compatibility of Cr‐CS dielectric thin films with aqueous solution‐processable semiconductors is demonstrated by growing ZnO nanorods via a hydrothermal method to fabricate flexible TFT devices. The ZnO nanorod‐based TFTs show a high field‐effect mobility (linear regime) of 10.48 cm2 V−1 s−1. Low temperature processing conditions (below 100 °C) and water as the solvent are utilized to ensure the process is environmental friendly to address the e‐waste problem. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Macromolecular Materials & Engineering Wiley

Aqueous Solution‐Processable, Flexible Thin‐Film Transistors Based on Crosslinked Chitosan Dielectric Thin Films

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Publisher
Wiley Subscription Services, Inc., A Wiley Company
Copyright
© 2018 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim
ISSN
1438-7492
eISSN
1439-2054
D.O.I.
10.1002/mame.201700468
Publisher site
See Article on Publisher Site

Abstract

The hydrophilic character of chitosan (CS) limits its use as a gate dielectric material in thin‐film transistors (TFTs) based on aqueous solution‐processable semiconductor materials. In this study, this drawback is overcome through controlled crosslinking of CS and report, for the first time, its application to aqueous solution‐processable TFTs. In comparison to natural CS thin films, crosslinked chitosan (Cr‐CS) thin films are hydrophobic. The dielectric properties of Cr‐CS thin films are explored through fabrication of metal–insulator–metal devices on a flexible substrate. Compared to natural CS, the Cr‐CS dielectric thin films show enhanced environmental and water stabilities, with a high breakdown voltage (10 V) and low leakage current (0.02 nA). The compatibility of Cr‐CS dielectric thin films with aqueous solution‐processable semiconductors is demonstrated by growing ZnO nanorods via a hydrothermal method to fabricate flexible TFT devices. The ZnO nanorod‐based TFTs show a high field‐effect mobility (linear regime) of 10.48 cm2 V−1 s−1. Low temperature processing conditions (below 100 °C) and water as the solvent are utilized to ensure the process is environmental friendly to address the e‐waste problem.

Journal

Macromolecular Materials & EngineeringWiley

Published: Jan 1, 2018

Keywords: ; ; ; ;

References

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