IntroductionGaN based high electron mobility transistors (HEMTs) are of particular interest for high‐power switching applications owing to their superior physical properties such as high breakdown field and high electron mobility. Metal‐oxide‐semiconductor (MOS) structures are preferred over conventional Schottky gates since they provide suppression of gate leakage, large operating voltage and the ability to achieve normally off operation. However, deposition of foreign dielectrics on GaN results in the formation of a high‐density of interface states (Dit ≈ 1012 – 1013 eV−1 cm−2) due to incomplete chemical bonds, structural damage and impurities at the dielectric/GaN interface. The interface states with both short and long emission time constants, are in electrical communication with the underlying semiconductor. Interface states can be charged and discharged depending on the surface potential and thus result in the threshold voltage instability of MOS‐HEMTs. Therefore, the development of high‐quality gate dielectric/III‐N interfaces plays perhaps the most significant role in achievement of high performance MOS‐HEMTs.Various oxide materials have been reported as gate dielectric for GaN MOS‐HEMTs. For example, Si3N4 deposited by in situ metalorganic chemical vapor deposition (MOCVD) , Al2O3 deposited by MOCVD or atomic layer deposition (ALD), HfO2 deposited by ALD and SiO2 deposited by ALD or plasma enhanced chemical vapor deposition. Among these,
Physica Status Solidi (A) Applications and Materials Science – Wiley
Published: Jan 1, 2018
Keywords: ; ; ; ; ;
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