This paper presents the design of a compact and wide bandwidth millimeter‐wave power detector, integrated at the output of an E‐band power amplifier and implemented in a 55‐nm SiGe BiCMOS process. It is based on a nonlinear PMOS detector core, and its measured output voltage tracks the output power of the PA from 67 to 90 GHz. It provides an insertion loss lower than 0.2 dB, and its responsivity can be tuned between 8 and 17 V/W. The output bandwidth is bigger than 3 GHz, which allows built‐in self‐test when transmitting multigigabit millimeter‐wave signals.
International Journal of Circuit Theory and Applications – Wiley
Published: Jan 1, 2018
Keywords: ; ; ;
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