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Growth kinetic and composition of the interfacial layer for RF sputtering Al<sub>2</sub>O<sub>3</sub>layer on germanium

Growth kinetic and composition of the interfacial layer for RF sputtering... http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Microelectronics International Unpaywall

Growth kinetic and composition of the interfacial layer for RF sputtering Al<sub>2</sub>O<sub>3</sub>layer on germanium

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Publisher
Unpaywall
ISSN
1356-5362
DOI
10.1108/mi-12-2015-0099
Publisher site
See Article on Publisher Site

Abstract

Journal

Microelectronics InternationalUnpaywall

Published: May 2, 2017

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