ZnO Films Deposited by Electron-Beam Evaporation: The Effect of Ion Bombardment

ZnO Films Deposited by Electron-Beam Evaporation: The Effect of Ion Bombardment The deposition of ZnO films on different substrates by electron-beam evaporation is studied experimentally. The substrate is essentially held at a negative bias voltage during the process. The dependence of the lattice structure and photoluminescence spectra of the films on the type of substrate and the bias is investigated. It is shown that the incident ion stream resulting from the negative bias allows one to produce films at a lower substrate temperature. The bias that provides epitaxial growth is found to lie between –400 and –200 V. It is determined that the films deposited on (0001)-oriented sapphire have a carrier concentration of 7.5 × 1018 cm–3 and a Hall mobility of 18.4 cm2/(V s). http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

ZnO Films Deposited by Electron-Beam Evaporation: The Effect of Ion Bombardment

Loading next page...
 
/lp/springer_journal/zno-films-deposited-by-electron-beam-evaporation-the-effect-of-ion-Fgrky6W8P0
Publisher
Kluwer Academic Publishers-Plenum Publishers
Copyright
Copyright © 2002 by MAIK "Nauka/Interperiodica"
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1015415120927
Publisher site
See Article on Publisher Site

Abstract

The deposition of ZnO films on different substrates by electron-beam evaporation is studied experimentally. The substrate is essentially held at a negative bias voltage during the process. The dependence of the lattice structure and photoluminescence spectra of the films on the type of substrate and the bias is investigated. It is shown that the incident ion stream resulting from the negative bias allows one to produce films at a lower substrate temperature. The bias that provides epitaxial growth is found to lie between –400 and –200 V. It is determined that the films deposited on (0001)-oriented sapphire have a carrier concentration of 7.5 × 1018 cm–3 and a Hall mobility of 18.4 cm2/(V s).

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 13, 2004

References

You’re reading a free preview. Subscribe to read the entire article.


DeepDyve is your
personal research library

It’s your single place to instantly
discover and read the research
that matters to you.

Enjoy affordable access to
over 12 million articles from more than
10,000 peer-reviewed journals.

All for just $49/month

Explore the DeepDyve Library

Unlimited reading

Read as many articles as you need. Full articles with original layout, charts and figures. Read online, from anywhere.

Stay up to date

Keep up with your field with Personalized Recommendations and Follow Journals to get automatic updates.

Organize your research

It’s easy to organize your research with our built-in tools.

Your journals are on DeepDyve

Read from thousands of the leading scholarly journals from SpringerNature, Elsevier, Wiley-Blackwell, Oxford University Press and more.

All the latest content is available, no embargo periods.

See the journals in your area

DeepDyve Freelancer

DeepDyve Pro

Price
FREE
$49/month

$360/year
Save searches from
Google Scholar,
PubMed
Create lists to
organize your research
Export lists, citations
Read DeepDyve articles
Abstract access only
Unlimited access to over
18 million full-text articles
Print
20 pages/month
PDF Discount
20% off