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N.N. Ledentsov, V.M. Ustinov, V.A. Shchukin (1998)
Heterostructures with Quantum Dots: Fabrication, Properties, and LasersFiz. Tekh. Poluprovodn. (St. Petersburg), 32
A.M. Afanas'ev, A.A. Zaitsev, R.M. Imamov (1998)
XRD Studies of Interfaces in an AlAs/Ga1 ¶ xAlxAs SuperlatticeKristallografiya, 43
A.M. Afanas'ev, M.A. Chuev, R.M. Imamov (2001)
Double-Crystal X-ray Diffractometry Used as a Substitute for the X-ray Standing-Wave MethodPis'ma Zh. Eksp. Teor. Fiz., 74
N. Darovwski, U. Pietsch, K.-H. Wang (1998)
X-ray Diffraction Analysis of Strain Relaxation in Free Standing and Buried CaAs/GaInAs/GaAs SQL Lateral StructuresThin Solid Films, 236
A.M. Afanas'ev, M.A. Chuev, R.M. Imamov (2001)
XRD Structure Determination of InxGa1-xAs Quantum-Well InterfacesKristallografiya, 46
Q. Zhuang, Jiemin Li, Yiping Zeng, L. Pan, Huanying Li, M. Kong, Lan-ying Lin (1999)
Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structuresJournal of Crystal Growth, 200
F. Schäffler (1997)
High-mobility Si and Ge structuresSemiconductor Science and Technology, 12
A.M. Afanas'ev, A.A. Zaitsev, R.M. Imamov (1998)
Evaluation of X-ray Diffractometry as a Method for the Examination of δ-Doped Layers: The Case of an {Al0.27Ga0.73As, In0.13Ga0.87As}/GaAs HeterostructureKristallografiya, 43
T. Metzger, I. Kegel, R. Paniago, A. Lorke, J. Peisl, J. Schulze, I. Eisele, P. Schittenhelm, G. Abstreiter (1998)
Shape, size, strain and correlations in quantum dot systems studied by grazing incidence X-ray scattering methodsThin Solid Films, 336
Z. Alferov (1998)
History and Future of Semiconductor HeterostructuresFiz. Tekh. Poluprovodn. (St. Petersburg), 32
N.N. Faleev, Y. Musikhin, A.A. Suvorova (2001)
XRD and TEM Study of the Anisotropy in the Spatial Distribution of In(Ga)As Quantum Dots in In(Ga)As/GaAs-Based MultilayersFiz. Tekh. Poluprovodn. (St. Petersburg), 35
A.M. Afanas'ev, M.A. Chuev, R.M. Imamov (1997)
Stacks of GaAs/InxGa1-xAs Bilayers Examined by Double-Crystal X-ray DiffractometryKristallografiya, 42
Heterostructures implementing InAs quantum dots in a GaAs matrix are fabricated and examined by double-crystal XRD. Structural parameters of the layers and interfaces are evaluated. It is shown that the structural quality of the cap layer is affected by its doping level.
Russian Microelectronics – Springer Journals
Published: Oct 11, 2004
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