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XRD Study of Quantum-Well Heterostructures

XRD Study of Quantum-Well Heterostructures Heterostructures implementing InAs quantum dots in a GaAs matrix are fabricated and examined by double-crystal XRD. Structural parameters of the layers and interfaces are evaluated. It is shown that the structural quality of the cap layer is affected by its doping level. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

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References (12)

Publisher
Springer Journals
Copyright
Copyright © 2003 by MAIK Nauka/Interperiodica
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
DOI
10.1023/A:1024571314889
Publisher site
See Article on Publisher Site

Abstract

Heterostructures implementing InAs quantum dots in a GaAs matrix are fabricated and examined by double-crystal XRD. Structural parameters of the layers and interfaces are evaluated. It is shown that the structural quality of the cap layer is affected by its doping level.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 11, 2004

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