X-ray or UV adjustment of MOS threshold voltage: Analytical and numerical modeling

X-ray or UV adjustment of MOS threshold voltage: Analytical and numerical modeling A model is formulated that describes how radiation-induced charge accumulates in the gate oxide of a MOS structure and how it decays through tunneling and thermal emission. The model is used in a numerical analysis of the x-ray or UV adjustment of threshold voltage in MOS-circuit manufacture. The limits of this process technique are evaluated. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

X-ray or UV adjustment of MOS threshold voltage: Analytical and numerical modeling

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Publisher
Springer Journals
Copyright
Copyright © 2006 by Pleiades Publishing, Inc.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739706050088
Publisher site
See Article on Publisher Site

Abstract

A model is formulated that describes how radiation-induced charge accumulates in the gate oxide of a MOS structure and how it decays through tunneling and thermal emission. The model is used in a numerical analysis of the x-ray or UV adjustment of threshold voltage in MOS-circuit manufacture. The limits of this process technique are evaluated.

Journal

Russian MicroelectronicsSpringer Journals

Published: Aug 29, 2006

References

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