Techniques are presented for the radiation fine adjustment of threshold voltage in MOS circuits, employing x-rays (photon energies 10–20 keV) and near-UV radiation. The adjustment consists in the controlled generation of heat-resistant charge in gate oxide under irradiation, due to the presence of phosphorus in the oxide. The experience gained by using the techniques in the mass production of a wide variety of MOS circuits is briefly reviewed.
Russian Microelectronics – Springer Journals
Published: Oct 13, 2004
It’s your single place to instantly
discover and read the research
that matters to you.
Enjoy affordable access to
over 18 million articles from more than
15,000 peer-reviewed journals.
All for just $49/month
Query the DeepDyve database, plus search all of PubMed and Google Scholar seamlessly
Save any article or search result from DeepDyve, PubMed, and Google Scholar... all in one place.
All the latest content is available, no embargo periods.
“Whoa! It’s like Spotify but for academic articles.”@Phil_Robichaud