An experiment using an atomic-force microscope to monitor the wet etching of silicon dioxide subjected to local ion implantation is presented. The adequate agreement between the measured and the computed values of the etching rate as a function of depth strongly indicates that the technique proposed allows one to determine the thickness of the radiation-damaged layer and to accurately evaluate the degree of sputtering or swelling for the implantation layer.
Russian Microelectronics – Springer Journals
Published: Oct 13, 2004
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