Wet Etching of Ion-Implanted Silicon Dioxide Monitored by Atomic-Force Microscopy

Wet Etching of Ion-Implanted Silicon Dioxide Monitored by Atomic-Force Microscopy An experiment using an atomic-force microscope to monitor the wet etching of silicon dioxide subjected to local ion implantation is presented. The adequate agreement between the measured and the computed values of the etching rate as a function of depth strongly indicates that the technique proposed allows one to determine the thickness of the radiation-damaged layer and to accurately evaluate the degree of sputtering or swelling for the implantation layer. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Wet Etching of Ion-Implanted Silicon Dioxide Monitored by Atomic-Force Microscopy

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Publisher
Kluwer Academic Publishers-Plenum Publishers
Copyright
Copyright © 2002 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1014341409402
Publisher site
See Article on Publisher Site

Abstract

An experiment using an atomic-force microscope to monitor the wet etching of silicon dioxide subjected to local ion implantation is presented. The adequate agreement between the measured and the computed values of the etching rate as a function of depth strongly indicates that the technique proposed allows one to determine the thickness of the radiation-damaged layer and to accurately evaluate the degree of sputtering or swelling for the implantation layer.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 13, 2004

References

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