Void transformation and dopant distribution in porous silicon

Void transformation and dopant distribution in porous silicon It is established by experiment that the densification of a porous-silicon (PSi) film starts at its surface, where the material is most discontinuous. The film-wafer system tends to thermal equilibrium by downward mass transport along voids to a depth of 50 μm. As a result, open voids less than 50 μm deep disappear completely, whereas deeper ones become isolated from the surface. These structural changes are manifested in doping profiles. Strong dependence is found of void transformation on diffusion temperature and time, wafer doping level, and original PSi-film porosity. Specifically, changing to higher diffusion temperatures, longer diffusion times, or higher wafer doping levels results in a reduced porosity throughout the PSi film. Maximum densification is observed in PSi films with an original porosity of 15–50%. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Void transformation and dopant distribution in porous silicon

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Copyright © 2007 by Pleiades Publishing, Ltd.
Engineering; Electrical Engineering
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