Void transformation and dopant distribution in porous silicon

Void transformation and dopant distribution in porous silicon It is established by experiment that the densification of a porous-silicon (PSi) film starts at its surface, where the material is most discontinuous. The film-wafer system tends to thermal equilibrium by downward mass transport along voids to a depth of 50 μm. As a result, open voids less than 50 μm deep disappear completely, whereas deeper ones become isolated from the surface. These structural changes are manifested in doping profiles. Strong dependence is found of void transformation on diffusion temperature and time, wafer doping level, and original PSi-film porosity. Specifically, changing to higher diffusion temperatures, longer diffusion times, or higher wafer doping levels results in a reduced porosity throughout the PSi film. Maximum densification is observed in PSi films with an original porosity of 15–50%. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Void transformation and dopant distribution in porous silicon

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Publisher
Nauka/Interperiodica
Copyright
Copyright © 2007 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739707010064
Publisher site
See Article on Publisher Site

Abstract

It is established by experiment that the densification of a porous-silicon (PSi) film starts at its surface, where the material is most discontinuous. The film-wafer system tends to thermal equilibrium by downward mass transport along voids to a depth of 50 μm. As a result, open voids less than 50 μm deep disappear completely, whereas deeper ones become isolated from the surface. These structural changes are manifested in doping profiles. Strong dependence is found of void transformation on diffusion temperature and time, wafer doping level, and original PSi-film porosity. Specifically, changing to higher diffusion temperatures, longer diffusion times, or higher wafer doping levels results in a reduced porosity throughout the PSi film. Maximum densification is observed in PSi films with an original porosity of 15–50%.

Journal

Russian MicroelectronicsSpringer Journals

Published: Feb 1, 2007

References

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