Void transformation and dopant distribution in porous silicon

Void transformation and dopant distribution in porous silicon It is established by experiment that the densification of a porous-silicon (PSi) film starts at its surface, where the material is most discontinuous. The film-wafer system tends to thermal equilibrium by downward mass transport along voids to a depth of 50 μm. As a result, open voids less than 50 μm deep disappear completely, whereas deeper ones become isolated from the surface. These structural changes are manifested in doping profiles. Strong dependence is found of void transformation on diffusion temperature and time, wafer doping level, and original PSi-film porosity. Specifically, changing to higher diffusion temperatures, longer diffusion times, or higher wafer doping levels results in a reduced porosity throughout the PSi film. Maximum densification is observed in PSi films with an original porosity of 15–50%. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Void transformation and dopant distribution in porous silicon

Loading next page...
 
/lp/springer_journal/void-transformation-and-dopant-distribution-in-porous-silicon-63DaiCfa9A
Publisher
Nauka/Interperiodica
Copyright
Copyright © 2007 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739707010064
Publisher site
See Article on Publisher Site

Abstract

It is established by experiment that the densification of a porous-silicon (PSi) film starts at its surface, where the material is most discontinuous. The film-wafer system tends to thermal equilibrium by downward mass transport along voids to a depth of 50 μm. As a result, open voids less than 50 μm deep disappear completely, whereas deeper ones become isolated from the surface. These structural changes are manifested in doping profiles. Strong dependence is found of void transformation on diffusion temperature and time, wafer doping level, and original PSi-film porosity. Specifically, changing to higher diffusion temperatures, longer diffusion times, or higher wafer doping levels results in a reduced porosity throughout the PSi film. Maximum densification is observed in PSi films with an original porosity of 15–50%.

Journal

Russian MicroelectronicsSpringer Journals

Published: Feb 1, 2007

References

You’re reading a free preview. Subscribe to read the entire article.


DeepDyve is your
personal research library

It’s your single place to instantly
discover and read the research
that matters to you.

Enjoy affordable access to
over 18 million articles from more than
15,000 peer-reviewed journals.

All for just $49/month

Explore the DeepDyve Library

Search

Query the DeepDyve database, plus search all of PubMed and Google Scholar seamlessly

Organize

Save any article or search result from DeepDyve, PubMed, and Google Scholar... all in one place.

Access

Get unlimited, online access to over 18 million full-text articles from more than 15,000 scientific journals.

Your journals are on DeepDyve

Read from thousands of the leading scholarly journals from SpringerNature, Elsevier, Wiley-Blackwell, Oxford University Press and more.

All the latest content is available, no embargo periods.

See the journals in your area

DeepDyve

Freelancer

DeepDyve

Pro

Price

FREE

$49/month
$360/year

Save searches from
Google Scholar,
PubMed

Create lists to
organize your research

Export lists, citations

Read DeepDyve articles

Abstract access only

Unlimited access to over
18 million full-text articles

Print

20 pages / month

PDF Discount

20% off