Very high thermal stability with excellent dielectric, and non-ohmics properties of Mg-doped CaCu3Ti4.2O12 ceramics

Very high thermal stability with excellent dielectric, and non-ohmics properties of Mg-doped... In this work, the nominal CaCu Mg Ti O (0.00, 0.05 and 0.10) ceramics were prepared by sintering pellets of their 3−x x 4.2 12 precursor powders obtained by a polymer pyrolysis solution method at 1100 °C for different sintering time of 8 and 12 h. Very 4 4 low loss tangent (tanδ) < 0.009–0.014 and giant dielectric constant (ε′) ∼ 1.1 × 10 –1.8 × 10 with excellent temperature coef- ficient (Δε ′) less than ± 15% in a temperature range of − 60 to 210 °C were achieved. These excellent performances suggested a potent application of the ceramics for high temperature X8R and X9R capacitors. It was found that tanδ values decreased 2+ with increasing Mg dopants due to the increase of grain boundary resistance (R ) caused by the very high density of grain, gb 2+ resulting from the substitution of small ionic radius Mg dopants in the structure. In addition, CaCu Mg Ti O ceramics 3−x x 4.2 12 displayed non-linear characteristics with the significant enhancements of a non-linear coefficient (α ) and a breakdown field 2+ (E ) due to Mg doping. The high values of ε′ (14012), α (13.64) and E (5977.02 V/cm) with very low tanδ http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Materials Science: Materials in Electronics Springer Journals

Very high thermal stability with excellent dielectric, and non-ohmics properties of Mg-doped CaCu3Ti4.2O12 ceramics

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Publisher
Springer US
Copyright
Copyright © 2018 by Springer Science+Business Media, LLC, part of Springer Nature
Subject
Materials Science; Optical and Electronic Materials; Characterization and Evaluation of Materials
ISSN
0957-4522
eISSN
1573-482X
D.O.I.
10.1007/s10854-018-9381-9
Publisher site
See Article on Publisher Site

Abstract

In this work, the nominal CaCu Mg Ti O (0.00, 0.05 and 0.10) ceramics were prepared by sintering pellets of their 3−x x 4.2 12 precursor powders obtained by a polymer pyrolysis solution method at 1100 °C for different sintering time of 8 and 12 h. Very 4 4 low loss tangent (tanδ) < 0.009–0.014 and giant dielectric constant (ε′) ∼ 1.1 × 10 –1.8 × 10 with excellent temperature coef- ficient (Δε ′) less than ± 15% in a temperature range of − 60 to 210 °C were achieved. These excellent performances suggested a potent application of the ceramics for high temperature X8R and X9R capacitors. It was found that tanδ values decreased 2+ with increasing Mg dopants due to the increase of grain boundary resistance (R ) caused by the very high density of grain, gb 2+ resulting from the substitution of small ionic radius Mg dopants in the structure. In addition, CaCu Mg Ti O ceramics 3−x x 4.2 12 displayed non-linear characteristics with the significant enhancements of a non-linear coefficient (α ) and a breakdown field 2+ (E ) due to Mg doping. The high values of ε′ (14012), α (13.64) and E (5977.02 V/cm) with very low tanδ

Journal

Journal of Materials Science: Materials in ElectronicsSpringer Journals

Published: May 29, 2018

References

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