Utilization of self-assembled AuGe nanoparticles for improving performance of InGaAs/GaAs quantum dot infrared detector

Utilization of self-assembled AuGe nanoparticles for improving performance of InGaAs/GaAs quantum... We report the successful realization of a plasmonic-based heptalayer self-assembled InGaAs quantum-dot infrared photodetector (QDIP) using self-assembled AuGe nanoparticles. In comparison with as-grown device, AuGe detector showed a 30% increase in spectral response at a peak of ~5 μm and −1 V bias. We achieved two-order increment in peak responsivity of AuGe plasmonic-based detector in comparison to as-grown detector at 80 K. The improvements are attributed to increased light trapping in the device and strong plasmonic-QD interaction by the AuGe nanoparticles. In this technique, AuGe nanoparticles are self-assembled; therefore they don’t require very fine optical or e-beam lithography for patterning, indicating this technique will be helpful in reducing the cost of plasmonic based high-performance detectors. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Materials Science: Materials in Electronics Springer Journals

Utilization of self-assembled AuGe nanoparticles for improving performance of InGaAs/GaAs quantum dot infrared detector

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Publisher
Springer US
Copyright
Copyright © 2017 by Springer Science+Business Media New York
Subject
Materials Science; Optical and Electronic Materials; Characterization and Evaluation of Materials
ISSN
0957-4522
eISSN
1573-482X
D.O.I.
10.1007/s10854-017-7071-7
Publisher site
See Article on Publisher Site

Abstract

We report the successful realization of a plasmonic-based heptalayer self-assembled InGaAs quantum-dot infrared photodetector (QDIP) using self-assembled AuGe nanoparticles. In comparison with as-grown device, AuGe detector showed a 30% increase in spectral response at a peak of ~5 μm and −1 V bias. We achieved two-order increment in peak responsivity of AuGe plasmonic-based detector in comparison to as-grown detector at 80 K. The improvements are attributed to increased light trapping in the device and strong plasmonic-QD interaction by the AuGe nanoparticles. In this technique, AuGe nanoparticles are self-assembled; therefore they don’t require very fine optical or e-beam lithography for patterning, indicating this technique will be helpful in reducing the cost of plasmonic based high-performance detectors.

Journal

Journal of Materials Science: Materials in ElectronicsSpringer Journals

Published: May 10, 2017

References

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