Uniformity of Optical Constants in Amorphous Ta2O5 Thin Films as Measured by Spectroscopic Ellipsometry

Uniformity of Optical Constants in Amorphous Ta2O5 Thin Films as Measured by Spectroscopic... Amorphous Ta2O5 films are deposited on silicon substrates by reactive sputtering. The uniformity of refractive index and absorbance is evaluated by spectroscopic ellipsometry over the range 1.9–4.9 eV. The respective surface variations of the thickness d and the refractive index n are measured by scanning ellipsometry at a wavelength of 632.8 nm. It is established that n and d are uniform over a film to within Δn/n = 2.4% and Δd/d = 1%. The optical energy gap is estimated at 4.20 ± 0.05 eV. It is noted that the optical properties of the films indicate stoichiometric composition. It is found by AFM examination that the films have an almost atomically smooth surface. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Uniformity of Optical Constants in Amorphous Ta2O5 Thin Films as Measured by Spectroscopic Ellipsometry

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Publisher
Kluwer Academic Publishers-Plenum Publishers
Copyright
Copyright © 2004 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/B:RUMI.0000043044.12580.1e
Publisher site
See Article on Publisher Site

Abstract

Amorphous Ta2O5 films are deposited on silicon substrates by reactive sputtering. The uniformity of refractive index and absorbance is evaluated by spectroscopic ellipsometry over the range 1.9–4.9 eV. The respective surface variations of the thickness d and the refractive index n are measured by scanning ellipsometry at a wavelength of 632.8 nm. It is established that n and d are uniform over a film to within Δn/n = 2.4% and Δd/d = 1%. The optical energy gap is estimated at 4.20 ± 0.05 eV. It is noted that the optical properties of the films indicate stoichiometric composition. It is found by AFM examination that the films have an almost atomically smooth surface.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 19, 2004

References

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