Amorphous Ta2O5 films are deposited on silicon substrates by reactive sputtering. The uniformity of refractive index and absorbance is evaluated by spectroscopic ellipsometry over the range 1.9–4.9 eV. The respective surface variations of the thickness d and the refractive index n are measured by scanning ellipsometry at a wavelength of 632.8 nm. It is established that n and d are uniform over a film to within Δn/n = 2.4% and Δd/d = 1%. The optical energy gap is estimated at 4.20 ± 0.05 eV. It is noted that the optical properties of the films indicate stoichiometric composition. It is found by AFM examination that the films have an almost atomically smooth surface.
Russian Microelectronics – Springer Journals
Published: Oct 19, 2004
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