Two-dimensional thermal oxidation of nonplanar silicon surfaces

Two-dimensional thermal oxidation of nonplanar silicon surfaces Two-dimensional models of thermal oxidation of silicon, including those implemented using the SProcess application in the TCAD SenTaurus environment, are analyzed. A number of practically-important test structures, which demonstrate the peculiarities of the modeling, are used for the numerical experiments. In the course of the analysis and numerical modeling, the most accurate model is found that closely describes various “thin” phenomena occurring in the course of thermal oxidation of nonplanar silicon surfaces; the model is in close agreement with the experimental data. It is shown that the effect of various nonlinear mechanical phenomena is to be taken into account to provide the adequacy of the modeling. The model is calibrated to provide consistent results and increase the accuracy of modeling. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Two-dimensional thermal oxidation of nonplanar silicon surfaces

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Publisher
Springer Journals
Copyright
Copyright © 2015 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739714060055
Publisher site
See Article on Publisher Site

Abstract

Two-dimensional models of thermal oxidation of silicon, including those implemented using the SProcess application in the TCAD SenTaurus environment, are analyzed. A number of practically-important test structures, which demonstrate the peculiarities of the modeling, are used for the numerical experiments. In the course of the analysis and numerical modeling, the most accurate model is found that closely describes various “thin” phenomena occurring in the course of thermal oxidation of nonplanar silicon surfaces; the model is in close agreement with the experimental data. It is shown that the effect of various nonlinear mechanical phenomena is to be taken into account to provide the adequacy of the modeling. The model is calibrated to provide consistent results and increase the accuracy of modeling.

Journal

Russian MicroelectronicsSpringer Journals

Published: Mar 4, 2015

References

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