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- Publisher
- Springer Journals
- Copyright
- Copyright © 2017 by Springer Science+Business Media, LLC
- Subject
- Engineering; Mathematical and Computational Engineering; Electrical Engineering; Theoretical, Mathematical and Computational Physics; Optical and Electronic Materials; Mechanical Engineering
- ISSN
- 1569-8025
- eISSN
- 1572-8137
- DOI
- 10.1007/s10825-017-1089-1
- Publisher site
- See Article on Publisher Site
Abstract
This paper presents the two-dimensional analytical modeling of high-k gate stack Triple material double gatestrained SON MOSFET with a vertical Gaussian-like doping profile. The expression for surface potential has been calculated by solving the 2-D Poisson’s equation and by considering the parabolic potential approximation. The threshold voltages as well as the electric field are also calculated for the proposed model. In addition, detailed studies of the device response towards the various short-channel effects are also examined. The analytical results are verified using the results obtained from a 2-D device simulator, namely ATLAS, Silvaco.
Journal
Journal of Computational Electronics – Springer Journals
Published: Nov 8, 2017