Two dimensional analytical modeling of a high-K gate stack triple-material double gate strained silicon-on-nothing MOSFET with a vertical Gaussian doping

Two dimensional analytical modeling of a high-K gate stack triple-material double gate strained... This paper presents the two-dimensional analytical modeling of high-k gate stack Triple material double gatestrained SON MOSFET with a vertical Gaussian-like doping profile. The expression for surface potential has been calculated by solving the 2-D Poisson’s equation and by considering the parabolic potential approximation. The threshold voltages as well as the electric field are also calculated for the proposed model. In addition, detailed studies of the device response towards the various short-channel effects are also examined. The analytical results are verified using the results obtained from a 2-D device simulator, namely ATLAS, Silvaco. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Computational Electronics Springer Journals

Two dimensional analytical modeling of a high-K gate stack triple-material double gate strained silicon-on-nothing MOSFET with a vertical Gaussian doping

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Publisher
Springer Journals
Copyright
Copyright © 2017 by Springer Science+Business Media, LLC
Subject
Engineering; Mathematical and Computational Engineering; Electrical Engineering; Theoretical, Mathematical and Computational Physics; Optical and Electronic Materials; Mechanical Engineering
ISSN
1569-8025
eISSN
1572-8137
D.O.I.
10.1007/s10825-017-1089-1
Publisher site
See Article on Publisher Site

Abstract

This paper presents the two-dimensional analytical modeling of high-k gate stack Triple material double gatestrained SON MOSFET with a vertical Gaussian-like doping profile. The expression for surface potential has been calculated by solving the 2-D Poisson’s equation and by considering the parabolic potential approximation. The threshold voltages as well as the electric field are also calculated for the proposed model. In addition, detailed studies of the device response towards the various short-channel effects are also examined. The analytical results are verified using the results obtained from a 2-D device simulator, namely ATLAS, Silvaco.

Journal

Journal of Computational ElectronicsSpringer Journals

Published: Nov 8, 2017

References

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