Tunneling in MOS Systems: The Dependence of the Effective Barrier Height on the Structure of the Transition Layer at the Si/SiO2Interface in the Presence of Impurities

Tunneling in MOS Systems: The Dependence of the Effective Barrier Height on the Structure of the... Electron tunneling through a thin (2–5 nm) SiO2layer in MOSFETs is studied theoretically. The relationship between the effective barrier height and the structure of the transition layer at the Si/SiO2interface in the presence of impurities is investigated. The barrier height as a function of the normal coordinate is determined. The influence of sporadic traps is taken into account. The results incorporate experimental data, which were previously obtained. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Tunneling in MOS Systems: The Dependence of the Effective Barrier Height on the Structure of the Transition Layer at the Si/SiO2Interface in the Presence of Impurities

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Publisher
Kluwer Academic Publishers-Plenum Publishers
Copyright
Copyright © 2001 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1011992728977
Publisher site
See Article on Publisher Site

Abstract

Electron tunneling through a thin (2–5 nm) SiO2layer in MOSFETs is studied theoretically. The relationship between the effective barrier height and the structure of the transition layer at the Si/SiO2interface in the presence of impurities is investigated. The barrier height as a function of the normal coordinate is determined. The influence of sporadic traps is taken into account. The results incorporate experimental data, which were previously obtained.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 10, 2004

References

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