The performance of pristine and Ga doped ZnO thin films spray deposited on ITO as photoanode in dye-sensitized solar cell (DSSC) was investigated. X-ray diffraction analysis confirmed the hexagonal ZnO wurtzite phase, with preferential grains orientation along (002) plane for lower Ga concentration. Field emission scanning electron microscopy observations revealed homogeneous surface covering the entire substrate with a porous nature. Atomic force microscopy surface topography analysis indicated the deterioration of grain growth along c-axis for higher Ga doping levels. Transmission electron microscopy analysis revealed the formation of hexagonal and prismatic-shaped grains in the range 34–18 nm. Higher transmittance in the range of 85% in the visible region was obtained for 1.5 at.% Ga doped ZnO film, meanwhile the energy band gap increased with Ga doping reaching 3.46 eV. DSSC fabricated with 1.5 at.% Ga doped ZnO as photoanode and pomegranate dye as sensitizer exhibited a power conversion efficiency of 1.21%.
Journal of Materials Science: Materials in Electronics – Springer Journals
Published: May 31, 2018
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