Triple-Collector Lateral Bipolar Magnetotransistor: Response Mechanism and Relative Sensitivity

Triple-Collector Lateral Bipolar Magnetotransistor: Response Mechanism and Relative Sensitivity The operation of the triple-collector bipolar magnetotransistor is investigated by computer simulation. The device is a modification of the dual-collector lateral magnetotransistor built around a diffused well. With the substrate and the well connected externally with one another, the well–substrate junction serves as a third collector. Carrier migration is analyzed for different levels of injection. Two modes of field-to-current conversion are revealed, differing in the sign of the relative sensitivity. For each mode the emitter-to-base voltage that provides the maximum absolute value of the relative sensitivity is determined. The maximum values are found to be 0.43 and 0.16 1/T. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Triple-Collector Lateral Bipolar Magnetotransistor: Response Mechanism and Relative Sensitivity

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Publisher
Kluwer Academic Publishers-Plenum Publishers
Copyright
Copyright © 2003 by MAIK Nauka/Interperiodica
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1023917905143
Publisher site
See Article on Publisher Site

Abstract

The operation of the triple-collector bipolar magnetotransistor is investigated by computer simulation. The device is a modification of the dual-collector lateral magnetotransistor built around a diffused well. With the substrate and the well connected externally with one another, the well–substrate junction serves as a third collector. Carrier migration is analyzed for different levels of injection. Two modes of field-to-current conversion are revealed, differing in the sign of the relative sensitivity. For each mode the emitter-to-base voltage that provides the maximum absolute value of the relative sensitivity is determined. The maximum values are found to be 0.43 and 0.16 1/T.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 11, 2004

References

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