The operation of the triple-collector bipolar magnetotransistor is investigated by computer simulation. The device is a modification of the dual-collector lateral magnetotransistor built around a diffused well. With the substrate and the well connected externally with one another, the well–substrate junction serves as a third collector. Carrier migration is analyzed for different levels of injection. Two modes of field-to-current conversion are revealed, differing in the sign of the relative sensitivity. For each mode the emitter-to-base voltage that provides the maximum absolute value of the relative sensitivity is determined. The maximum values are found to be 0.43 and 0.16 1/T.
Russian Microelectronics – Springer Journals
Published: Oct 11, 2004
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