In silicon bipolar junction transistors, electrostatic discharge (ESD) is known to accelerate the degradation of the current gain factor β, which follows a pattern similar to that caused by thermal stress or ionizing irradiation. We use autoregressive integrated moving-average (ARIMA) models to predict the degradation of β from ESD-or life-test data.
Russian Microelectronics – Springer Journals
Published: Aug 29, 2006
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