Transistor-degradation prediction by time-series analysis

Transistor-degradation prediction by time-series analysis In silicon bipolar junction transistors, electrostatic discharge (ESD) is known to accelerate the degradation of the current gain factor β, which follows a pattern similar to that caused by thermal stress or ionizing irradiation. We use autoregressive integrated moving-average (ARIMA) models to predict the degradation of β from ESD-or life-test data. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Transistor-degradation prediction by time-series analysis

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Publisher
Springer Journals
Copyright
Copyright © 2006 by Pleiades Publishing, Inc.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S106373970605009X
Publisher site
See Article on Publisher Site

Abstract

In silicon bipolar junction transistors, electrostatic discharge (ESD) is known to accelerate the degradation of the current gain factor β, which follows a pattern similar to that caused by thermal stress or ionizing irradiation. We use autoregressive integrated moving-average (ARIMA) models to predict the degradation of β from ESD-or life-test data.

Journal

Russian Microelectronics – Springer Journals

Published: Aug 29, 2006

References

  • Vozdeistvie elektrostaticheskikh zaryadov na izdeliya poluprovodnikovoi elektroniki i radioelektronnuyu apparaturu
    Gorlov, M.I.; Andreev, A.V.; Vorontsov, I.V.
  • Gerontologiya kremnievykh integral’nykh skhem
    Gorlov, M.I.; Emel’yanov, V.A.; Strogonov, A.V.
  • Statisticheskii analiz dannykh na komp’yutere
  • Tsifrovaya obrabotka signalov
    Sergienko, A.B.
  • Handbook of Applicable Mathematics
  • Time Series Analysis: Forecasting and Control
    Box, G.E.P.; Jenkins, G.M.
  • Challenges Facing Microelectronics
    Sokolov, V.I.

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