The results of experimental studies and simulations of transient radiation effects in microwave monolithic integrated circuits, based on heterostructure field-effect transistors, affected by the pulse ionizing radiation, are presented. The physical model, which adequately describes transient radiation effects in field-effect transistors in dose rate range up to 1012 rad/s, is proposed. Based on the physical model, the equivalent electric circuit, taking into account the dominating ionization effects, intended for using in the computer-aided design (CAD), is constructed. The simulated ionizing responses of the microwave low-noise amplifier (LNA) MIC are in accordance with the experimental data.
Russian Microelectronics – Springer Journals
Published: Mar 26, 2014
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