Transient radiation effects in microwave monolithic integrated circuits based on heterostructure field-effect transistors: Experiment and model

Transient radiation effects in microwave monolithic integrated circuits based on heterostructure... The results of experimental studies and simulations of transient radiation effects in microwave monolithic integrated circuits, based on heterostructure field-effect transistors, affected by the pulse ionizing radiation, are presented. The physical model, which adequately describes transient radiation effects in field-effect transistors in dose rate range up to 1012 rad/s, is proposed. Based on the physical model, the equivalent electric circuit, taking into account the dominating ionization effects, intended for using in the computer-aided design (CAD), is constructed. The simulated ionizing responses of the microwave low-noise amplifier (LNA) MIC are in accordance with the experimental data. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Transient radiation effects in microwave monolithic integrated circuits based on heterostructure field-effect transistors: Experiment and model

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Publisher
Springer Journals
Copyright
Copyright © 2014 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S106373971402005X
Publisher site
See Article on Publisher Site

Abstract

The results of experimental studies and simulations of transient radiation effects in microwave monolithic integrated circuits, based on heterostructure field-effect transistors, affected by the pulse ionizing radiation, are presented. The physical model, which adequately describes transient radiation effects in field-effect transistors in dose rate range up to 1012 rad/s, is proposed. Based on the physical model, the equivalent electric circuit, taking into account the dominating ionization effects, intended for using in the computer-aided design (CAD), is constructed. The simulated ionizing responses of the microwave low-noise amplifier (LNA) MIC are in accordance with the experimental data.

Journal

Russian MicroelectronicsSpringer Journals

Published: Mar 26, 2014

References

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