Topological transformation of submicron VLSIs for the double lithographic mask technology

Topological transformation of submicron VLSIs for the double lithographic mask technology One of the main problems in the topological transformation of submicron VLSIs for the double lithographic mask technology is the decomposition of the initial topological layer into two new ones. Transformation algorithms of the VLSI topology for the double lithographic mask technology, which are oriented towards the application of high-performance computing systems, as well as the results of experimental investigations, which are performed using the developed software, are discussed. The advantages and disadvantages of the suggested approaches are discussed. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Topological transformation of submicron VLSIs for the double lithographic mask technology

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Publisher
Springer US
Copyright
Copyright © 2013 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739713060085
Publisher site
See Article on Publisher Site

Abstract

One of the main problems in the topological transformation of submicron VLSIs for the double lithographic mask technology is the decomposition of the initial topological layer into two new ones. Transformation algorithms of the VLSI topology for the double lithographic mask technology, which are oriented towards the application of high-performance computing systems, as well as the results of experimental investigations, which are performed using the developed software, are discussed. The advantages and disadvantages of the suggested approaches are discussed.

Journal

Russian MicroelectronicsSpringer Journals

Published: Nov 6, 2013

References

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