Thin-film capacitor based on the strontium titanate formed by the sol gel technique

Thin-film capacitor based on the strontium titanate formed by the sol gel technique A thin-film ferroelectric capacitor was produced on a silicon substrate. A multilayer strontium titanate film of 280 nm thickness is the base of the capacitor. This film was made by the sol gel technique at the annealing temperature of 750°C. The bottom electrode was produced from platinum and the upper one was produced from nickel. The mean value of the dielectric constant is 153 and the standard deviation is 12. The mean value of the dielectric loss tangent is 0.06 and the standard deviation is 0.01. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Thin-film capacitor based on the strontium titanate formed by the sol gel technique

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Publisher
Pleiades Publishing
Copyright
Copyright © 2015 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739715050108
Publisher site
See Article on Publisher Site

Abstract

A thin-film ferroelectric capacitor was produced on a silicon substrate. A multilayer strontium titanate film of 280 nm thickness is the base of the capacitor. This film was made by the sol gel technique at the annealing temperature of 750°C. The bottom electrode was produced from platinum and the upper one was produced from nickel. The mean value of the dielectric constant is 153 and the standard deviation is 12. The mean value of the dielectric loss tangent is 0.06 and the standard deviation is 0.01.

Journal

Russian MicroelectronicsSpringer Journals

Published: Nov 4, 2015

References

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