Thermoelectric properties of the (Bi,Sb)2Te3-based material obtained by spark plasma sintering

Thermoelectric properties of the (Bi,Sb)2Te3-based material obtained by spark plasma sintering The dependence of the thermoelectric properties of the nanostructured bulk (Bi,Sb)2Te3 material on the composition and the spark plasma-sintering (SPS) temperature T SPS has been studied. It has been revealed that the Bi0.4Sb1.6Te3 solid solution sintered at a temperature of 450–500°C has a thermoelectric figure of merit ZT = 1.25–1.28. The dependence of thermoelectric properties on the sintering temperature T SPS above 400°C is correlated to the transformation of the fine structure of the material due to the rearrangement of point vacancy-donor defects in the process of repeated recrystallization. It has been established that point structural defects make a considerable contribution to the formation of the thermoelectric properties of nanostructured material. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Thermoelectric properties of the (Bi,Sb)2Te3-based material obtained by spark plasma sintering

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Publisher
Springer US
Copyright
Copyright © 2013 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739713080052
Publisher site
See Article on Publisher Site

Abstract

The dependence of the thermoelectric properties of the nanostructured bulk (Bi,Sb)2Te3 material on the composition and the spark plasma-sintering (SPS) temperature T SPS has been studied. It has been revealed that the Bi0.4Sb1.6Te3 solid solution sintered at a temperature of 450–500°C has a thermoelectric figure of merit ZT = 1.25–1.28. The dependence of thermoelectric properties on the sintering temperature T SPS above 400°C is correlated to the transformation of the fine structure of the material due to the rearrangement of point vacancy-donor defects in the process of repeated recrystallization. It has been established that point structural defects make a considerable contribution to the formation of the thermoelectric properties of nanostructured material.

Journal

Russian MicroelectronicsSpringer Journals

Published: Nov 14, 2013

References

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