The thermal-oxidation growth of dielectric films on InP substrates with NH4NO3 introduced into the oxidizing atmosphere is studied experimentally. Due to the simultaneous formation of N2O from NH4NO3, this type of thermal oxidation of InP is found to run faster than the oxidation involving the external supply of humid O2 or N2O. The films thus produced demonstrate adequate dielectric performance.
Russian Microelectronics – Springer Journals
Published: Oct 13, 2004
It’s your single place to instantly
discover and read the research
that matters to you.
Enjoy affordable access to
over 18 million articles from more than
15,000 peer-reviewed journals.
All for just $49/month
Query the DeepDyve database, plus search all of PubMed and Google Scholar seamlessly
Save any article or search result from DeepDyve, PubMed, and Google Scholar... all in one place.
All the latest content is available, no embargo periods.
“Whoa! It’s like Spotify but for academic articles.”@Phil_Robichaud