Theoretical analysis of defect formation processes in silicon nitride

Theoretical analysis of defect formation processes in silicon nitride Processes of defect formation in Si3N4 by the Schottky, Frenkel, and anti-Frenkel mechanisms are analyzed theoretically within the method of quasichemical approximation. Equations describing the formation of defects in Si3N4 are derived, analyzed, and solved for different conditions of electroneutrality, and dependences of the number density of point defects in Si3N4 on the partial pressure of nitrogen under equilibrium conditions are determined. It is assumed that nitrogen vacancies are the predominant kind of point defect of nonstoichiometric origin. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Refractories and Industrial Ceramics Springer Journals

Theoretical analysis of defect formation processes in silicon nitride

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Publisher
Springer US
Copyright
Copyright © 1998 by Plenum Publishing Corporationn
Subject
Chemistry; Characterization and Evaluation of Materials; Materials Science; Ceramics, Glass, Composites, Natural Methods
ISSN
1083-4877
eISSN
1573-9139
D.O.I.
10.1007/BF02764267
Publisher site
See Article on Publisher Site

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