The use of stressed silicon in MOS transistors and CMOS structures

The use of stressed silicon in MOS transistors and CMOS structures In the review, the changes in electronic processes in the channel of the MOS transistor taking place under applying mechanical stresses are described. It is shown that the use of the stressed films of silicon nitride, the source and sink from the germanium-silicon alloy, etc., leads to an increase in the mobility of holes and electrons and to an increase in the efficiency of transistor operation. The application of this method to CMOS structures is also described. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

The use of stressed silicon in MOS transistors and CMOS structures

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Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2009 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739709020012
Publisher site
See Article on Publisher Site

Abstract

In the review, the changes in electronic processes in the channel of the MOS transistor taking place under applying mechanical stresses are described. It is shown that the use of the stressed films of silicon nitride, the source and sink from the germanium-silicon alloy, etc., leads to an increase in the mobility of holes and electrons and to an increase in the efficiency of transistor operation. The application of this method to CMOS structures is also described.

Journal

Russian MicroelectronicsSpringer Journals

Published: Mar 28, 2009

References

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