The Use of Different Pulsed Electron Irradiation for the Formation of Radiation Defects in Silicon Crystals

The Use of Different Pulsed Electron Irradiation for the Formation of Radiation Defects in... This paper reports the formation of structural defects in the lattice of silicon (n-Si) single crystals, as a result of irradiation by different intensities and pulses of electrons. The samples were studied by means of Hall effect measurements of electro-physical parameters (specifically the concentration of the main charge carriers) as a function of temperature and radiation dose. The role of the radiation current density (pulse height) is discussed, which gives rise to a peculiar behavior in the electrical-physical properties of n-Si. In particular, thermal processes are found not to develop, due to the ultrafast (pulse duration in the range 10−12–10−13s) nature of the incident radiation, which causes an almost “pure” energy interaction to occur between the radiation and the atoms within the crystal, and the formation of cluster defects. A scheme for the time-scale of the formation of these radiation defects is presented. From the dose and temperature dependences of the concentration of main charge carriers, the radiation defects introduction rates were determined. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Electronic Materials Springer Journals

The Use of Different Pulsed Electron Irradiation for the Formation of Radiation Defects in Silicon Crystals

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Publisher
Springer Journals
Copyright
Copyright © 2018 by The Minerals, Metals & Materials Society
Subject
Materials Science; Optical and Electronic Materials; Characterization and Evaluation of Materials; Electronics and Microelectronics, Instrumentation; Solid State Physics
ISSN
0361-5235
eISSN
1543-186X
D.O.I.
10.1007/s11664-018-6286-6
Publisher site
See Article on Publisher Site

Abstract

This paper reports the formation of structural defects in the lattice of silicon (n-Si) single crystals, as a result of irradiation by different intensities and pulses of electrons. The samples were studied by means of Hall effect measurements of electro-physical parameters (specifically the concentration of the main charge carriers) as a function of temperature and radiation dose. The role of the radiation current density (pulse height) is discussed, which gives rise to a peculiar behavior in the electrical-physical properties of n-Si. In particular, thermal processes are found not to develop, due to the ultrafast (pulse duration in the range 10−12–10−13s) nature of the incident radiation, which causes an almost “pure” energy interaction to occur between the radiation and the atoms within the crystal, and the formation of cluster defects. A scheme for the time-scale of the formation of these radiation defects is presented. From the dose and temperature dependences of the concentration of main charge carriers, the radiation defects introduction rates were determined.

Journal

Journal of Electronic MaterialsSpringer Journals

Published: Apr 13, 2018

References

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