The Structure of Complex Thin-Film Systems from Ellipsometric Simulation: A PbI2–Cu Photoresist

The Structure of Complex Thin-Film Systems from Ellipsometric Simulation: A PbI2–Cu Photoresist It is shown that the structure of complex thin-film systems can be studied ellipsometrically. In the ellipsometric method used in this work, the distribution of the rf permittivity ε(z) across the depth is simulated within models of uniform layers and linearly nonuniform layers. Difficulties associated with finding the ellipsometric parameters for a reflecting system with nonuniformly distributed ε(z) are considered. It was demonstrated that vacuum deposition of PbI2–Cu thin-film inorganic photoresist causes the transition layer to form at the Cu/PbI2 interface due to copper penetrating into the interface region of PbI2. The parameters of this layer correlate with the PbI2 film porosity. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

The Structure of Complex Thin-Film Systems from Ellipsometric Simulation: A PbI2–Cu Photoresist

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Publisher
Kluwer Academic Publishers-Plenum Publishers
Copyright
Copyright © 2001 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1009469708304
Publisher site
See Article on Publisher Site

Abstract

It is shown that the structure of complex thin-film systems can be studied ellipsometrically. In the ellipsometric method used in this work, the distribution of the rf permittivity ε(z) across the depth is simulated within models of uniform layers and linearly nonuniform layers. Difficulties associated with finding the ellipsometric parameters for a reflecting system with nonuniformly distributed ε(z) are considered. It was demonstrated that vacuum deposition of PbI2–Cu thin-film inorganic photoresist causes the transition layer to form at the Cu/PbI2 interface due to copper penetrating into the interface region of PbI2. The parameters of this layer correlate with the PbI2 film porosity.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 10, 2004

References

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